公开(公告)号：US08072401B2

公开(公告)日：2011-12-06

申请号：US11689900

申请日：2007-03-22

申请人： Hau-yan Lu ,  Chi-wen Chen ,  Ting-chang Chang

发明人： Hau-yan Lu ,  Chi-wen Chen ,  Ting-chang Chang

IPC分类号： G09G3/32

CPC分类号： G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2320/043

摘要： A pixel circuit includes a first transistor coupled to a supply voltage end, a second transistor coupled to a ground end, a storage capacitor, a third transistor coupled to a data end, a fourth transistor, a fifth transistor coupled to the second transistor and the second end of the storage capacitor, and a light-emitting element coupled to the fourth transistor. The first transistor is used for conducting a supply voltage from the supply voltage end in response to a trigger of an enable signal. The second transistor is used for conducting a ground voltage from the ground end when a scan signal voltage is triggered. The storage capacitor includes a first end and a second end coupled to the first transistor and the second transistor, respectively. The third transistor is used for conducting a data signal voltage when the scan signal voltage is triggered. The fourth transistor is used for generating a conducting current based on the data signal voltage when the scan signal voltage is not triggered. The fifth transistor is used for forming a conducting route between the storage capacitor and the fifth transistor. The light-emitting element is used for generating light based on the conducting current of the fourth transistor.

摘要翻译： 像素电路包括耦合到电源电压端的第一晶体管，耦合到接地端的第二晶体管，存储电容器，耦合到数据端的第三晶体管，第四晶体管，耦合到第二晶体管的第五晶体管和 存储电容器的第二端和耦合到第四晶体管的发光元件。 第一晶体管用于响应于使能信号的触发而从电源电压端引导电源电压。 当触发扫描信号电压时，第二晶体管用于从接地端传导接地电压。 存储电容器包括分别耦合到第一晶体管和第二晶体管的第一端和第二端。 当触发扫描信号电压时，第三晶体管用于传导数据信号电压。 当扫描信号电压未被触发时，第四晶体管用于基于数据信号电压产生导通电流。 第五晶体管用于在存储电容器和第五晶体管之间形成导通路径。 发光元件用于基于第四晶体管的导通电流产生光。

公开(公告)号：US20080074360A1

公开(公告)日：2008-03-27

申请号：US11689900

申请日：2007-03-22

申请人： Hau-yan Lu ,  Chi-wen Chen ,  Ting-chang Chang

发明人： Hau-yan Lu ,  Chi-wen Chen ,  Ting-chang Chang

IPC分类号： G09G3/30

CPC分类号： G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2320/043

摘要： A pixel circuit includes a first transistor coupled to a supply voltage end, a second transistor coupled to a ground end, a storage capacitor, a third transistor coupled to a data end, a fourth transistor, a fifth transistor coupled to the second transistor and the second end of the storage capacitor, and a light-emitting element coupled to the fourth transistor. The first transistor is used for conducting a supply voltage from the supply voltage end in response to a trigger of an enable signal. The second transistor is used for conducting a ground voltage from the ground end when a scan signal voltage is triggered. The storage capacitor includes a first end and a second end coupled to the first transistor and the second transistor, respectively. The third transistor is used for conducting a data signal voltage when the scan signal voltage is triggered. The fourth transistor is used for generating a conducting current based on the data signal voltage when the scan signal voltage is not triggered. The fifth transistor is used for forming a conducting route between the storage capacitor and the fifth transistor. The light-emitting element is used for generating light based on the conducting current of the fourth transistor.

摘要翻译： 像素电路包括耦合到电源电压端的第一晶体管，耦合到接地端的第二晶体管，存储电容器，耦合到数据端的第三晶体管，第四晶体管，耦合到第二晶体管的第五晶体管和 存储电容器的第二端和耦合到第四晶体管的发光元件。 第一晶体管用于响应于使能信号的触发而从电源电压端引导电源电压。 当触发扫描信号电压时，第二晶体管用于从接地端传导接地电压。 存储电容器包括分别耦合到第一晶体管和第二晶体管的第一端和第二端。 当触发扫描信号电压时，第三晶体管用于传导数据信号电压。 当扫描信号电压未被触发时，第四晶体管用于基于数据信号电压产生导通电流。 第五晶体管用于在存储电容器和第五晶体管之间形成导通路径。 发光元件用于基于第四晶体管的导通电流产生光。

公开(公告)号：US20090085036A1

公开(公告)日：2009-04-02

申请号：US11972056

申请日：2008-01-10

申请人： Chi-wen Chen ,  Meng-hsiang Chang

发明人： Chi-wen Chen ,  Meng-hsiang Chang

IPC分类号： H01L31/0368 ,  H01L31/112

CPC分类号： H01L31/1136

摘要： A light sensor includes an intrinsic layer, a first ion doping area disposed one side of the intrinsic layer, a second ion doping area disposed at the other side of the intrinsic layer, an oxide insulating layer on the intrinsic layer, and a gate metal on the oxide insulating layer. The first and second ion doping areas have the same P type or N type doped ions. The intrinsic layer further includes a first light sensing region close to the first ion doping area. The first light sensing region is used for generating electron-hole pairs based on luminance of incident light.

摘要翻译： 光传感器包括本征层，设置在本征层一侧的第一离子掺杂区域，设置在本征层另一侧的第二离子掺杂区域，本征层上的氧化物绝缘层，以及栅极金属 氧化物绝缘层。 第一和第二离子掺杂区域具有相同的P型或N型掺杂离子。 本征层还包括靠近第一离子掺杂区的第一光感测区域。 第一光感测区域用于基于入射光的亮度产生电子 - 空穴对。

公开(公告)号：US08044473B2

公开(公告)日：2011-10-25

申请号：US11972056

申请日：2008-01-10

申请人： Chi-wen Chen ,  Meng-hsiang Chang

发明人： Chi-wen Chen ,  Meng-hsiang Chang

IPC分类号： H01L27/14

CPC分类号： H01L31/1136

摘要： A light sensor includes an intrinsic layer, a first ion doping area disposed one side of the intrinsic layer, a second ion doping area disposed at the other side of the intrinsic layer, an oxide insulating layer on the intrinsic layer, and a gate metal on the oxide insulating layer. The first and second ion doping areas have the same P type or N type doped ions. The intrinsic layer further includes a first light sensing region close to the first ion doping area. The first light sensing region is used for generating electron-hole pairs based on luminance of incident light.

摘要翻译： 光传感器包括本征层，设置在本征层一侧的第一离子掺杂区域，设置在本征层另一侧的第二离子掺杂区域，本征层上的氧化物绝缘层，以及栅极金属 氧化物绝缘层。 第一和第二离子掺杂区域具有相同的P型或N型掺杂离子。 本征层还包括靠近第一离子掺杂区的第一光感测区域。 第一光感测区域用于基于入射光的亮度产生电子 - 空穴对。