公开(公告)号：US06841483B2

公开(公告)日：2005-01-11

申请号：US09782185

申请日：2001-02-12

申请人： Helen H. Zhu ,  James R. Bowers ,  Ian J. Morey ,  Wayne Babie ,  Michael Goss

发明人： Helen H. Zhu ,  James R. Bowers ,  Ian J. Morey ,  Wayne Babie ,  Michael Goss

IPC分类号： H01L21/311 ,  H01L21/302

CPC分类号： H01L21/31138

摘要： Method for etching a feature in an integrated circuit wafer with minimized effect of micromasking. The method introduces a flow of etchant gas including a fluorocarbon gas to the wafer, and uses the etchant gas to form a plasma in proximity with at least a portion of the wafer. The plasma is used to etch at least a portion of the feature in the wafer. Disassociation of the fluorocarbon into fluorine and hydrocarbon species performs two functions. The fluorine species prevents or significantly reduces sputtered hardmask components from depositing on the floor of the etched feature during etching. The hydrocarbon species acts to form a passivation layer on the sidewalls of the feature.

摘要翻译： 用微蚀刻效应最小化在集成电路晶片中蚀刻特征的方法。 该方法将包括碳氟化合物气体的蚀刻剂气体流引入晶片，并且使用蚀刻剂气体在晶片的至少一部分附近形成等离子体。 等离子体用于蚀刻晶片中的特征的至少一部分。 将碳氟化合物分解成氟和烃类具有两个功能。 氟化物防止或显着减少溅射的硬掩模组分在蚀刻期间沉积在蚀刻特征的地板上。 烃类起到在特征的侧壁上形成钝化层的作用。