公开(公告)号：US06525957B1

公开(公告)日：2003-02-25

申请号：US10029085

申请日：2001-12-21

申请人： Herbert Goronkin ,  Nicholas D. Rizzo ,  Bradlfy N. Engel

发明人： Herbert Goronkin ,  Nicholas D. Rizzo ,  Bradlfy N. Engel

IPC分类号： G11C1115

CPC分类号： G11C11/5607 ,  G11C11/15

摘要： A magneto-electronic component includes a first current line (120, 520, 620, 820) for generating a first magnetic field, a magnetic memory cell (140, 540, 640, 740, 840), and a second current line (170, 470) for generating a second magnetic field and substantially perpendicular to the first current line. The magnetic memory cell includes a multi-state memory layer having a structure adjacent to the first current line such that a magnetic flux emanating from the multi-state memory layer is substantially confined to wrap around the first current line. The second current line is located adjacent to a portion of the multi-state memory layer.

摘要翻译： 磁电子部件包括用于产生第一磁场的第一电流线（120,520,620,820），磁存储单元（140,540,640,740,840）和第二电流线（170， 470），用于产生基本上垂直于第一电流线的第二磁场。 磁存储单元包括具有与第一电流线相邻的结构的多状态存储器层，使得从多状态存储层发出的磁通量基本上被限制在围绕第一电流线缠绕。 第二电流线位于多状态存储器层的一部分附近。