Method and apparatus for supplying background gas in a sputtering chamber
    1.
    发明授权
    Method and apparatus for supplying background gas in a sputtering chamber 失效
    用于在溅射室中供应背景气体的方法和装置

    公开(公告)号:US3976555A

    公开(公告)日:1976-08-24

    申请号:US560352

    申请日:1975-03-20

    IPC分类号: C23C14/34 C23C14/56 C23C15/00

    摘要: In a sputtering chamber where there is at least one target of some material comprising at least two elements which are to be sputtered as a compound onto a substrate within the chamber, a target having a plurality of edges is framed by a metallic shield to confine the sputtering to a forward direction and the background gas needed for maintaining stoichiometry of the sputtered material is injected directly inside of the shield so that immediately upon entry into the chamber a substantial portion thereof flows over the target. A perforated manifold running the length of an edge of the target releases the background gas to the target along its length.

    摘要翻译: 在溅射室中,存在至少一个靶材,其中至少一个材料包含至少两个要作为化合物溅射的元件,作为化合物溅射在室内的衬底上,具有多个边缘的靶被金属屏蔽物框架限制 溅射到正向,并且用于保持溅射材料的化学计量所需的背景气体直接注入到屏蔽内部,使得在进入腔室时,其基本部分流过靶。 运行目标边缘长度的穿孔歧管将背景气体沿着其长度释放到目标物体上。