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公开(公告)号:US20240155931A1
公开(公告)日:2024-05-09
申请号:US18402792
申请日:2024-01-03
Applicant: Universal Display Corporation
Inventor: Kent Khuong NGUYEN , Sriram KRISHNASWAMI , Daniel TOET , Jeff HAWTHORNE , William E. QUINN
CPC classification number: H10K71/135 , C23C14/04 , C23C14/228 , C23C14/50 , H10K71/164 , H10K71/191
Abstract: Systems and methods for depositing materials on a substrate via OVJP are provided. A float table and grippers are used to move and position the substrate relative to one or more OVJP print bars to reduce the chance of damaging or compromising the substrate or prior depositions.
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公开(公告)号:US20240150885A1
公开(公告)日:2024-05-09
申请号:US18416088
申请日:2024-01-18
Applicant: Universal Display Corporation
Inventor: Gregory MCGRAW , Edwin VAN DEN TILLAART , William E. QUINN , Sven PEKELDER , Matthew KING
IPC: C23C14/24 , C23C14/12 , C23C14/22 , H10K50/11 , H10K50/15 , H10K50/16 , H10K50/18 , H10K50/81 , H10K50/82
CPC classification number: C23C14/243 , C23C14/12 , C23C14/228 , H10K50/11 , H10K50/15 , H10K50/16 , H10K50/18 , H10K50/81 , H10K50/82 , B05D1/60
Abstract: Designs and arrangements for sublimation cells are provided, which enriches an inert carrier gas with organic vapor such that the partial pressure of the organic vapor is highly stable in time. Stability is achieved by controlling the local rates of evaporation along the solid-gas interface through one or more crucibles, thereby reducing the effects of greater headspace and lowering interfacial area as the source depletes. Local evaporation rates also can be controlled using either temperature distribution or convective flow fields.
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公开(公告)号:US20240052476A1
公开(公告)日:2024-02-15
申请号:US18233582
申请日:2023-08-14
Applicant: RTX Corporation
Inventor: Brian T. Hazel , Michael J. Maloney , James W. Neal , David A. Litton
CPC classification number: C23C14/30 , C23C14/243 , C23C14/228 , C23C14/246 , C23C14/505
Abstract: A deposition apparatus (20) comprising: a chamber (22); a process gas source (62) coupled to the chamber; a vacuum pump (52) coupled to the chamber; at least two electron guns (26); one or more power supplies (30) coupled to the electron guns; a plurality of crucibles (32,33,34) positioned or positionable in an operative position within a field of view of at least one said electron gun; and a part holder (170) having at least one operative position for holding parts spaced above the crucibles by a standoff height H. The standoff height H is adjustable in a range including at least 22 inches.
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公开(公告)号:US11866816B2
公开(公告)日:2024-01-09
申请号:US16355893
申请日:2019-03-18
Applicant: United Technologies Corporation
Inventor: Joseph A. DePalma , Mladen F. Trubelja , David A. Litton , Dmitri L. Novikov , Sergei F. Burlatsky
CPC classification number: C23C14/228 , C23C14/02 , C23C14/083 , C23C14/24 , C23C14/243 , C23C14/30
Abstract: An apparatus for use in a coating process includes a chamber, a crucible configured to hold a coating material in the chamber, an energy source operable to heat the interior of the chamber, a coating envelope situated with respect to the crucible, and at least one gas manifold located near the coating envelope. The at least one gas manifold is configured to provide a gas screen between the coating envelope and the crucible.
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公开(公告)号:US11814721B2
公开(公告)日:2023-11-14
申请号:US17723237
申请日:2022-04-18
Applicant: Applied Materials, Inc.
Inventor: Simon Lau
IPC: C23C14/50 , H01L21/683 , H01L21/687 , C23C16/458 , C23C14/22
CPC classification number: C23C14/50 , C23C16/4581 , C23C16/4583 , C23C16/4586 , H01L21/6838 , H01L21/6875 , H01L21/68757 , H01L21/68785 , C23C14/228
Abstract: The present disclosure provides a holding arrangement. The holding arrangement for holding a substrate includes: a body portion having a first side; a dry adhesive material provided on the first side of the body portion; a seal surrounding the dry adhesive material and configured to provide a vacuum region on the first side, wherein the dry adhesive material is provided in the vacuum region; and a conduit to evacuate the vacuum region.
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公开(公告)号:US20230357918A1
公开(公告)日:2023-11-09
申请号:US18311519
申请日:2023-05-03
Applicant: Universal Display Corporation
Inventor: Jeff HAWTHORNE , William E. QUINN , Kent Khuong NGUYEN , Sriram KRISHNASWAMI , Gregory McGRAW , Daniel TOET
CPC classification number: C23C14/228 , C23C14/12 , C23C14/50 , C23C14/54
Abstract: Methods, systems, and devices are provided for organic vapor jet deposition (OVJP), which require significantly fewer print heads than conventional OVJP deposition systems. The disclosed OVJP systems include half the number of OVJP print heads than a conventional system, or less, and provide for relative movement of the substrate and print heads to allow for rapid and comprehensive material deposition over the full surface of the substrate.
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公开(公告)号:US20230333309A1
公开(公告)日:2023-10-19
申请号:US18132812
申请日:2023-04-10
Applicant: Applied Materials, Inc.
Inventor: Rui LI , Takashi KURATOMI , Alexia Adilene PORTILLO RIVERA
CPC classification number: G02B6/0065 , C23C14/083 , C23C14/10 , C23C14/228 , C23C14/34 , G02B6/0016 , G02B5/1857
Abstract: Embodiments of the present disclosure generally relate to optical devices having barrier layers for reduced hardmask diffusion and/or hardmask residue, and related methods of forming the optical devices. In one or more embodiments, a plurality of optical device structures each include a barrier layer disposed between a device function layer and a hardmask layer prior to removal of the hardmask layer.
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公开(公告)号:US20230295793A1
公开(公告)日:2023-09-21
申请号:US18176916
申请日:2023-03-01
Applicant: ROLLS-ROYCE plc
Inventor: Dmitrii I. USHMAEV , Zhirong LIAO , Dragos A. AXINTE , Andrew D. NORTON , James KELL
CPC classification number: C23C14/228 , C23C14/083
Abstract: An apparatus for coating a surface of a substrate includes an evaporant source disposed within an open environment including air at atmospheric pressure. The evaporant source includes a coating material. The apparatus further includes an energy beam source disposed within the open environment and configured to emit at least one energy beam that impinges on an emission region of the evaporant source to form a vapour plume at the emission region. The vapour plume includes the coating material of the evaporant source. The apparatus further includes a fixture configured to position the evaporant source relative to the substrate within the open environment, such that a maximum distance between the emission region of the evaporant source and the surface of the substrate is less than or equal to 10 cm.
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9.
公开(公告)号:US20230183852A1
公开(公告)日:2023-06-15
申请号:US18081766
申请日:2022-12-15
Applicant: Universal Display Corporation
Inventor: Gregory McGRAW , William E. QUINN , Matthew KING , Elliot H. HARTFORD, JR. , Siddharth HARIKRISHNA MOHAN , Benjamin SWEDLOVE , Gregg KOTTAS
CPC classification number: C23C14/12 , B41J2/045 , C23C14/04 , C23C14/54 , C23C14/228 , B05D1/60 , B41J2202/02
Abstract: Embodiments of the disclosed subject matter provide methods and systems including a nozzle, a source of material to be deposited on a substrate in fluid communication with the nozzle, a delivery gas source in fluid communication with the source of material to be deposited with the nozzle, an exhaust channel disposed adjacent to the nozzle, a confinement gas source in fluid communication with the nozzle and the exhaust channel, and disposed adjacent to the exhaust channel, and an actuator to adjust a fly height separation between a deposition nozzle aperture of the nozzle and a deposition target. The adjustment of the fly height separation may stop and/or start the deposition of the material from the nozzle.
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公开(公告)号:US20190194797A1
公开(公告)日:2019-06-27
申请号:US16329569
申请日:2017-08-31
Applicant: Nanyang Technological University
Inventor: Xuechao YU , Peng YU , Qijie WANG , Zheng LIU
CPC classification number: C23C14/228 , C23C14/0005 , C23C14/0623 , C23C14/0629 , C30B29/46 , C30B33/06 , H01L31/0272 , H01L31/032
Abstract: A chalcogenide film is provided. The chalcogenide film includes a noble metal chalcogenide material having a formula MCx. M represents a noble metal. C represents a chalcogen. x is any one positive value equal to or more than 1.4 and less than 2. The chalcogenide film is configured to generate electrons and holes upon light incident on the chalcogenide film.
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