公开(公告)号：US07619268B2

公开(公告)日：2009-11-17

申请号：US10544924

申请日：2004-01-07

申请人： Herman Kohlstedt ,  Rene Meyer

发明人： Herman Kohlstedt ,  Rene Meyer

IPC分类号： H01L29/92

CPC分类号： G11C11/22 ,  H01L27/11502

摘要： Memory element consisting of an electrode (2), a ferroelectric layer (3) adjoining the latter, a layer (4) made from non-ferroelectric material adjoining the ferroelectric layer (3) and an electrode (5) adjoining the layer (4) made from non-ferroelectric material, wherein the ferroelectric layer is at least 10 nanometers thick, the electrical resistance, which is formed by the non-ferroelectric layer and the ferroelectric layer, depends upon the direction of polarization in the ferroelectric layer, and wherein the memory element comprises means for measuring the electrical resistance of the non-ferroelectric layer and the ferroelectric layer.

摘要翻译： 存储元件由电极（2），与之相邻的铁电体层（3）构成，由邻接铁电体层（3）的非铁电材料制成的层（4）和邻接层（4）的电极（5） 由非铁电材料制成，其中铁电层为至少10纳米厚，由非铁电层和铁电层形成的电阻取决于铁电层中的极化方向，并且其中 存储元件包括用于测量非铁电层和铁电层的电阻的装置。