公开(公告)号：US20190019863A1

公开(公告)日：2019-01-17

申请号：US16065782

申请日：2016-01-15

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Di Liang ,  Xue Xue

IPC: H01L29/06 ,  H01L21/762 ,  H01L21/20 ,  H01L21/306 ,  H01L27/07

CPC classification number: H01L29/0649 ,  H01L21/2007 ,  H01L21/306 ,  H01L21/762 ,  H01L21/76251 ,  H01L27/07 ,  H01L29/20 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78642 ,  H01L29/78681

Abstract: A multilayer device includes a substrate having a trench extending along a first surface of the substrate. A first layer disposed on the first surface of the substrate, the first layer comprising a given surface and another surface. A dielectric layer is formed between the given surface of the first layer and the first surface of the substrate. An active region disposed on the other surface of the first layer overlying the trench, wherein at least a portion of the active region resides substantially above a region defined by the trench.