公开(公告)号：US5580796A

公开(公告)日：1996-12-03

申请号：US470057

申请日：1995-06-06

申请人： Hideaki Takizawa ,  Yasuhiro Nasu ,  Kazuhiro Watanabe ,  Shiro Hirota ,  Kazuo Nonaka ,  Seii Sato ,  Teiji Majima

发明人： Hideaki Takizawa ,  Yasuhiro Nasu ,  Kazuhiro Watanabe ,  Shiro Hirota ,  Kazuo Nonaka ,  Seii Sato ,  Teiji Majima

IPC分类号： G02F1/136 ,  G02F1/13 ,  G02F1/1333 ,  G02F1/1345 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L21/84

CPC分类号： G02F1/13458 ,  G02F1/136213 ,  H01L27/12 ,  G02F1/1345 ,  G02F1/13452 ,  G02F2001/133357

摘要： A thin film transistor matrix device comprises a transparent insulating substrate, a thin film transistor unit, a picture element unit, a storage capacitance unit, a gate terminal unit, and a drain terminal unit, the storage capacitance unit including a storage capacitance electrode formed on the transparent insulating substrate and formed of a metal layer of the same material as the gate electrode; a dielectric film formed on the storage capacitance electrode and formed of an insulating film common with the gate insulating film and a non-doped semiconductor layer of the same material as the semiconductor active layer; and a counter electrode formed on the dielectric film and formed of a doped semiconductor layer of the same material as the semiconductor contact layer and a metal layer of the same material as the source electrode and the drain electrode, the counter electrode being connected to the picture element electrode through a contact hole opened in a protecting film common with the passivation film. Thus, the fabrication process of the TFT matrix device can be simplified, and lower costs can be realized. Characteristic changes of the storage capacitance can be prevented, and yields and reliability can be improved.

摘要翻译： 一种薄膜晶体管矩阵器件，包括透明绝缘衬底，薄膜晶体管单元，像素单元，存储电容单元，栅极端子单元和漏极端子单元，所述存储电容单元包括形成在 透明绝缘基板，由与栅电极相同材料的金属层形成; 形成在所述辅助电容电极上并由与所述栅极绝缘膜共用的绝缘膜和与所述半导体有源层相同材料的非掺杂半导体层形成的电介质膜; 以及形成在电介质膜上并由与半导体接触层相同材料的掺杂半导体层和与源电极和漏电极相同材料的金属层形成的对电极，对电极连接到图像 元件电极通过在与钝化膜共同的保护膜中打开的接触孔。 因此，可以简化TFT矩阵器件的制造工艺，并且可以实现更低的成本。 可以防止存储电容的特性变化，并且可以提高产量和可靠性。

公开(公告)号：US5483082A

公开(公告)日：1996-01-09

申请号：US174030

申请日：1993-12-28

申请人： Hideaki Takizawa ,  Yasuhiro Nasu ,  Kazuhiro Watanabe ,  Shiro Hirota ,  Kazuo Nonaka ,  Seii Sato ,  Teiji Majima

发明人： Hideaki Takizawa ,  Yasuhiro Nasu ,  Kazuhiro Watanabe ,  Shiro Hirota ,  Kazuo Nonaka ,  Seii Sato ,  Teiji Majima

IPC分类号： G02F1/136 ,  G02F1/13 ,  G02F1/1333 ,  G02F1/1345 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： G02F1/13458 ,  G02F1/136213 ,  H01L27/12 ,  G02F1/1345 ,  G02F1/13452 ,  G02F2001/133357

摘要： A thin film transistor matrix device comprises a transparent insulating substrate, a thin film transistor unit, a picture element unit, a storage capacitance unit, a gate terminal unit, and a drain terminal unit, the storage capacitance unit including a storage capacitance electrode formed on the transparent insulating substrate and formed of a metal layer of the same material as the gate electrode; a dielectric film formed on the storage capacitance electrode and formed of an insulating film common with the gate insulating film and a non-doped semiconductor layer of the same material as the semiconductor active layer; and a counter electrode formed on the dielectric film and formed of a doped semiconductor layer of the same material as the semiconductor contact layer and a metal layer of the same material as the source electrode and the drain electrode, the counter electrode being connected to the picture element electrode through a contact hole opened in a protecting film common with the passivation film. Thus, the fabrication process of the TFT matrix device can be simplified, and lower costs can be realized. Characteristic changes of the storage capacitance can be prevented, and yields and reliability can be improved.

摘要翻译： 一种薄膜晶体管矩阵器件，包括透明绝缘衬底，薄膜晶体管单元，像素单元，存储电容单元，栅极端子单元和漏极端子单元，所述存储电容单元包括形成在 透明绝缘基板，由与栅电极相同材料的金属层形成; 形成在所述辅助电容电极上并由与所述栅极绝缘膜共用的绝缘膜和与所述半导体有源层相同材料的非掺杂半导体层形成的电介质膜; 以及形成在电介质膜上并由与半导体接触层相同材料的掺杂半导体层和与源电极和漏电极相同材料的金属层形成的对电极，对电极连接到图像 元件电极通过在与钝化膜共同的保护膜中打开的接触孔。 因此，可以简化TFT矩阵器件的制造工艺，并且可以实现更低的成本。 可以防止存储电容的特性变化，并且可以提高产量和可靠性。

公开(公告)号：US4321446A

公开(公告)日：1982-03-23

申请号：US180181

申请日：1980-08-21

申请人： Hiroyasu Ogawa ,  Kazuo Nonaka ,  Hiroto Noda

发明人： Hiroyasu Ogawa ,  Kazuo Nonaka ,  Hiroto Noda

IPC分类号： C01B31/04 ,  C01B31/02 ,  D01F9/22 ,  D01F9/32 ,  H05B6/26 ,  D01F9/12

CPC分类号： D01F9/22 ,  C01B31/02 ,  D01F9/32 ,  H05B6/104

摘要： A vertical heating apparatus for production of graphite fibers from preoxidized fibers or carbon fibers comprises of a tubular heating element which generates heat by high frequency induction. A heat-insulating material layer surrounds the tubular heating element coaxially. The layer is composed of carbon particles having specific grain diameters and angles of repose. A high frequency induction unit is provided around the heat-insulating material layer also in a coaxial relation thereof.

摘要翻译： 用于从预氧化纤维或碳纤维生产石墨纤维的垂直加热装置包括通过高频感应产生热量的管状加热元件。 绝热材料层同轴地包围管状加热元件。 该层由具有特定晶粒直径和休止角的碳颗粒组成。 高频感应单元也以其同轴关系设置在隔热材料层的周围。