公开(公告)号：US06208032B1

公开(公告)日：2001-03-27

申请号：US09337672

申请日：1999-06-22

申请人： Hidefumi Yasuda ,  Mayumi Tomita

发明人： Hidefumi Yasuda ,  Mayumi Tomita

IPC分类号： H01L2348

CPC分类号： H01L24/02 ,  H01L23/53242 ,  H01L2224/0401 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/05042 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/14

摘要： A semiconductor device having an inter-layer insulation film that allows a refractory metal to be easily etched and that well covers high side walls of a gold plate and a fabrication method thereof are disclosed. The semiconductor device comprises a semiconductor substrate, a conductive portion formed on the semiconductor substrate, a metal film formed on the conductive portion, a gold plate portion formed on the metal film, an inter-layer insulation film formed on an area of the semiconductor substrate, the area being free from the conductive portion, the metal film, and the gold plate portion in such a manner that the inter-layer insulation film contacts side walls of the conductive portion, the metal film, and the gold plate portion, a refractory metal film formed in such a manner that the refractory metal film coats the gold plate portion, and a protection film formed in such a manner that the protection film exposes part of the refractory metal film as an electrically connecting portion and coats the inter-layer insulation film and the refractory metal film.

摘要翻译： 公开了一种半导体器件，其具有允许难熔金属易于蚀刻并且覆盖金板的高侧壁的层间绝缘膜及其制造方法。 半导体器件包括半导体衬底，形成在半导体衬底上的导电部分，形成在导电部分上的金属膜，形成在金属膜上的金板部分，形成在半导体衬底的区域上的层间绝缘膜 所述区域不含导电部分，金属膜和金板部分，使得层间绝缘膜接触导电部分，金属膜和金板部分的侧壁，耐火材料 金属膜以耐火金属膜涂覆金板部分的方式形成，并且保护膜以这样的方式形成，使得保护膜将难熔金属膜的一部分暴露为电连接部分并且涂覆层间绝缘体 薄膜和难熔金属薄膜。