公开(公告)号：US5041880A

公开(公告)日：1991-08-20

申请号：US365921

申请日：1989-06-14

申请人： Hideo Nojima ,  Shoei Katoaka ,  Nobuo Hashizume ,  Shuhei Tsuchimoto ,  Michitada Morisue

发明人： Hideo Nojima ,  Shoei Katoaka ,  Nobuo Hashizume ,  Shuhei Tsuchimoto ,  Michitada Morisue

IPC分类号： G11C11/44 ,  H01L39/18

CPC分类号： G11C11/44 ,  H01L39/18

摘要： A logic device includes a ceramic superconducting element having magneto-resistive characteristics, and three electrodes provided adjacent the ceramic superconducting element, and constructed in such a manner that a current is applied to one of the three electrode so that a magnetic field greater than a threshold magnetic field is normally applied to the ceramic superconducting element, and the other electrodes are used for increasing and decreasing the magnetic field. A memory device includes a superconducting loop at least one portion thereof being formed by a ceramic superconducting element having grain boundaries, and an electrode provided in approximation to said ceramic superconducting element, whereby a current flowing through a portion of said superconducting loop which is other than said ceramic superconducting element can be captured in said superconducting loop by a control of a magnetic field generated by the current flowing through said electrode.