公开(公告)号：US4965225A

公开(公告)日：1990-10-23

申请号：US413916

申请日：1989-09-28

申请人： Hideo Yamagishi ,  William A. Nevin ,  Hitoshi Nishio ,  Keiko Miki ,  Kazunori Tsuge ,  Yoshihisa Tawada

发明人： Hideo Yamagishi ,  William A. Nevin ,  Hitoshi Nishio ,  Keiko Miki ,  Kazunori Tsuge ,  Yoshihisa Tawada

IPC分类号： H01L31/0376 ,  H01L31/20

CPC分类号： H01L31/03767 ,  H01L31/208 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/29

摘要： An amorphous semiconductor film is prepared by the usual procedure and, then, established by exposing it to sufficient light intermittently to age the same. The degradation of the electrical characteristics of the semiconductor film on prolonged exposure to light is minimized by the above technique. The preferred intermittent light is a pulsed light. The above light treatment may be applied to an individual semiconductor film, a laminated assembly including at least the pin layers, a finished semiconductor device such as a solar cell or a semiconductor device prior to attachment of an electrode.