公开(公告)号：US20080102316A1

公开(公告)日：2008-05-01

申请号：US11977950

申请日：2007-10-26

申请人： Hideyuki Akimoto ,  Jun Masuko ,  Naoki Mukouyama

发明人： Hideyuki Akimoto ,  Jun Masuko ,  Naoki Mukouyama

IPC分类号： G11B5/39 ,  G11B5/60

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T428/1121

摘要： A magnetic read head has a first free-magnetic layer, a second free-magnetic layer, a non-magnetic layer provided between the first free-magnetic layer and the second free-magnetic layer, and a bias applying layer for applying a bias magnetic field in the vertical direction to the medium facing plane of the first free-magnetic layer and the second free-magnetic layer. Shape anisotropies of magnetization of the first free-magnetic layer and the second free-magnetic layer are inclined in the opposite direction with each other for the medium facing plane within film surfaces of respective free-magnetic layers. The first free-magnetic layer and the second free-magnetic layer are overlapped at the medium facing plane in the vertical direction at the surfaces of respective free-magnetic layer films, and the bias applying layer is located on the opposite plane to the medium facing plane of the first free-magnetic layer and the second free-magnetic layer.

摘要翻译： 磁读头具有第一自由磁性层，第二自由磁性层，设置在第一自由磁性层和第二自由磁性层之间的非磁性层，以及用于施加偏磁的偏置施加层 在与第一自由磁性层和第二自由磁性层的介质面相对的平面上的垂直方向。 第一自由磁性层和第二自由磁性层的磁化的形状各向异性在相应的自由磁性层的膜表面内相对于介质面向平面彼此相反的方向倾斜。 第一自由磁性层和第二自由磁性层在各个自由磁性层膜的表面处在垂直方向的中间面向平面处重叠，并且偏置施加层位于与介质面对的相反平面 第一自由磁性层和第二自由磁性层的平面。

公开(公告)号：US06462918B2

公开(公告)日：2002-10-08

申请号：US09962782

申请日：2001-09-25

申请人： Naoki Mukouyama

发明人： Naoki Mukouyama

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/00 ,  G11B5/3113 ,  G11B5/3903 ,  G11B2005/3996

摘要： The present invention is to provide a magnetoresistance effect type head which well generates the information stored in a memory device at high memory density while limiting the generation of Barkhausen noises. The magnetoresistance effect type head comprises a magnetoresistance effect element which contains a free magnetic layer having an overhang portion which is overhung and spread in left and right directions and is changed in resistance by a change in the azimuth of the magnetization of the free magnetic layer, and paired upper and lower magnetic wall control layers which are in contact with the upper and under surfaces of the left and right overhang portions of the free magnetic layer respectively and restrict the movement of the magnetic wall of the free magnetic layer.

摘要翻译： 本发明提供一种磁阻效应型磁头，其以高存储密度良好地生成存储在存储装置中的信息，同时限制了巴克豪森噪声的产生。 磁阻效应型磁头包括磁阻效应元件，该磁阻效应元件包含具有悬垂部分的自由磁性层，其悬垂并在左右方向上扩展，并且通过自由磁层的磁化方位的变化而改变电阻， 以及分别与自由磁性层的左右悬垂部分的上表面和下表面接触的上，下磁壁控制层，并限制自由磁性层的磁壁的移动。