公开(公告)号：US20090293802A1

公开(公告)日：2009-12-03

申请号：US12457065

申请日：2009-06-01

申请人： Hiroaki Taguchi ,  Hideki Hara ,  Ryoichi Kaito

发明人： Hiroaki Taguchi ,  Hideki Hara ,  Ryoichi Kaito

IPC分类号： C30B15/22

CPC分类号： C30B29/06 ,  C30B15/22 ,  C30B15/305 ,  C30B30/04

摘要： By giving a shoulder portion height of at least 100 mm in growing silicon single crystals having a diameter of 450 mm (weighing up to 1100 kg) by the CZ method, it becomes possible to inhibit the occurrence of dislocations in the shoulder formation step to thereby achieve a yield improvement and increase productivity. Furthermore, when this method is applied under application of a transverse magnetic field with a predetermined intensity, the occurrence of dislocations can be further inhibited and, accordingly, defect-free silicon single crystals suited for wafer manufacture can be grown with high production efficiency. Thus, the method is best suited for the production of large-diameter silicon single crystals having a diameter of 450 mm, which are applied in the manufacture of semiconductor devices.

摘要翻译： 通过在CZ方法中生长出直径为450mm（重达1100kg）的单晶硅的肩部高度至少为100mm，可以抑制肩部形成步骤中的位错的发生，由此 实现产量提高并提高生产率。 此外，当施加具有预定强度的横向磁场的这种方法时，可以进一步抑制位错的发生，因此，可以以高生产效率生长适用于晶片制造的无缺陷硅单晶。 因此，该方法最适用于生产直径为450mm的大直径硅单晶，其应用于半导体器件的制造中。

公开(公告)号：US20090293804A1

公开(公告)日：2009-12-03

申请号：US12457067

申请日：2009-06-01

申请人： Hiroaki Taguchi ,  Hideki Hara ,  Ryoichi Kaito

发明人： Hiroaki Taguchi ,  Hideki Hara ,  Ryoichi Kaito

IPC分类号： C30B15/22

CPC分类号： C30B15/305 ,  C30B15/22 ,  C30B29/06 ,  C30B30/04

摘要： A method of shoulder formation in growing silicon single crystals by the CZ method which comprises causing the taper angle to vary in at least two stages, desirably three stages or four stages, can inhibit the occurrence of dislocations in the shoulder formation step and thereby improve the yield and increase the productivity. As the number of stages resulting from varying the taper angle is increased, possible disturbances to occur at crystal growth interfaces and incur dislocations can be reduced and, further, when the above shoulder formation method is applied under application of a transverse magnetic field having a predetermined intensity, the occurrence of dislocations can be inhibited and defect-free silicon single crystals suited for the manufacture of wafers can be grown with high production efficiency. Therefore, the method is best suited for the production of large-diameter silicon single crystals with a diameter of 450 mm which are to be applied to manufacturing semiconductor devices.

摘要翻译： 包括使锥角在至少两个阶段，优选三个阶段或四个阶段中变化的CZ方法生长的单晶硅中的肩部形成方法可以抑制肩部形成步骤中位错的发生，从而改善 产量并提高生产率。 随着锥角变化的阶段数量的增加，在晶体生长界面发生可能的干扰并引起位错，此外，当应用上述肩部形成方法时，施加具有预定的 强度，可以抑制位错的发生，并且可以以高生产效率生长适合制造晶片的无缺陷硅单晶。 因此，该方法最适用于生产直径为450mm的大直径硅单晶，其应用于制造半导体器件。

公开(公告)号：US20090293803A1

公开(公告)日：2009-12-03

申请号：US12457066

申请日：2009-06-01

申请人： Takanori Tsurumaru ,  Hideki Hara ,  Ryoichi Kaito

发明人： Takanori Tsurumaru ,  Hideki Hara ,  Ryoichi Kaito

IPC分类号： C30B15/22

CPC分类号： C30B30/04 ,  C30B15/22 ,  C30B15/305 ,  C30B29/06

摘要： By providing a length of not less than 100 mm to a tail portion to be formed following the cylindrical body portion in growing silicon single crystals having a cylindrical body portion with a diameter of 450 mm using the CZ method, it becomes possible to inhibit the occurrence of dislocations in the tail portion and thus achieve improvements in yield and productivity. A transverse magnetic field having an intensity of not less than 0.1 T is preferably applied on the occasion of formation of that tail portion.

摘要翻译： 通过使用CZ方法，在生长的具有直径为450mm的圆筒体部分的硅单晶中的圆柱体部分之后形成不小于100mm的长度，可以抑制发生 从而实现产量和生产率的提高。 在形成该尾部的场合，优选施加强度不小于0.1T的横向磁场。

公开(公告)号：US08376809B2

公开(公告)日：2013-02-19

申请号：US12708842

申请日：2010-02-19

申请人： Ryoichi Kaito

发明人： Ryoichi Kaito

IPC分类号： B24B1/00

CPC分类号： B24B5/047 ,  B24B5/045 ,  B24B5/50 ,  B24B41/061

摘要： A cylindrical grinder is disclosed that includes a support unit including an upper support device and a lower support device, in which an ingot of silicon single crystal is interposed in a direction of axis line between the upper support device and the lower support device and is clampingly held to be rotated around the axis line, and a grinding unit that relatively moves along the direction of axis line of the ingot to traverse grind an outer circumference of the ingot. The upper support device is placed at an upper position and the lower support device is placed at a lower position, so that the support unit clampingly holds the ingot in a state in which the direction of the axis line of the ingot is disposed along a vertical direction.

摘要翻译： 公开了一种圆柱形磨床，其包括支撑单元，该支撑单元包括上支撑装置和下支撑装置，其中硅单晶锭沿着上支撑装置和下支撑装置之间的轴线方向插入，并且夹紧 被保持为围绕轴线旋转;以及研磨单元，其沿着所述锭的轴线方向相对移动以横过所述锭的外周。 上支撑装置被放置在上部位置，下部支撑装置被放置在下部位置，使得支撑单元夹紧地将锭保持在铸锭的轴线的方向沿垂直方向设置的状态 方向。