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公开(公告)号：US20240247402A1
公开(公告)日：2024-07-25
申请号：US18626962
申请日：2024-04-04
发明人： Gaurab Samanta , Parthiv Daggolu , Sumeet Bhagavat , Soubir Basak , Nan Zhang
摘要： A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.
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公开(公告)号：US20240076800A1
公开(公告)日：2024-03-07
申请号：US18272253
申请日：2021-11-22
发明人： Hiroyuki KAMADA , Kiyotaka TAKANO
摘要： A single crystal pulling apparatus includes: a pulling furnace having a central axis; and magnetic field generating apparatus around the pulling furnace and having coils, for applying a horizontal magnetic field to molten semiconductor raw material to suppress convection in crucible, in which, main coils and sub-coils are provided, as the main coils, two pairs of coils arranged facing each other are provided, two coil axes thereof are included in the same horizontal plane, a center angle α between the two coil axes sandwiching the X-axis, which is a magnetic force line direction on the central axis in the horizontal plane, is 100 degrees or more and 120 degrees or less, as the sub-coils, a pair of superconducting coils arranged to face each other is provided and its one coil axis is aligned with the X-axis, and current values of the main coils and the sub-coils can be set independently.
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公开(公告)号：US20240060208A1
公开(公告)日：2024-02-22
申请号：US18269423
申请日：2021-11-05
申请人： SUMCO CORPORATION
发明人： Ryusuke YOKOYAMA , Wataru SUGIMURA
摘要： A heating portion heats a silicon melt in a quartz crucible. The heating portion includes: a heat generation portion integrally molded into a cylinder; and four power supply portions for supplying electric power to the heat generation portion. When the heating portion is divided by a virtual plane into two including a first heating region located on one side of the heat generation portion and a second heating region located on the other side of the heat generation portion with respect to the virtual plane, the virtual plane passing through a center axis of the heat generation portion and being perpendicular to the heat generation portion and parallel to a central magnetic field line of a horizontal magnetic field applied to the silicon melt, a heat generation amount of the first heating region and a heat generation amount of the second heating region are set to different values.
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公开(公告)号：US20230175166A1
公开(公告)日：2023-06-08
申请号：US17605399
申请日：2020-03-19
摘要： The present invention is a single-crystal pulling apparatus including: a pulling furnace which has a heater and a crucible arranged and which has a central axis; and a magnetic field generation device having superconducting coils, where the magnetic field generation device has four of the superconducting coils, two of the superconducting coils are arranged in each of two regions divided by a cross section that includes an X axis, the X axis being a direction of lines of magnetic force at the central axis in the horizontal plane including all the coil axes of the four superconducting coils, and includes the central axis of the pulling furnace so as to have line symmetry about the cross section, the four superconducting coils are all arranged so that the coil axes have an angle within a range of more than −30° and less than 30° relative to a Y axis, the direction of the lines of magnetic force thereof have line symmetry about the cross section, and in each of the regions, the two superconducting coils generate lines of magnetic force in opposite directions. This provides a single-crystal pulling apparatus with which there is no need to move the magnetic field generation device when dismantling and setting up the single-crystal pulling apparatus, and the oxygen concentration in the single crystal to be grown can be reduced, and at the same time, growth striations in the single crystal to be grown can be suppressed.
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公开(公告)号：US20180016702A1
公开(公告)日：2018-01-18
申请号：US15392118
申请日：2016-12-28
发明人： DEYUAN XIAO , RICHARD R. CHANG
摘要： The present application provides a method for growing monocrystalline silicon by using Czochralski method, comprising: step (1) melting a deuterium-, nitrogen- and barium-doped silicon sheet and a polycrystalline silicon in a crucible; step (2) forming a deuterium- and nitrogen-doped monocrystalline silicon ingot by using magnetic field-applied Czochralski method. The impurity level of the melt and the grown crystal can be reduced according to the present application. By applying rapid thermal annealing to the nitrogen-doped monocrystalline silicon sheet, crystal originated particle defects in surface area of the silicon sheet can be eliminated. The storage of deuterium atoms in gaps of the silicon sheet is able to reduce the contents of oxygen and carbon impurities. Moreover, the deuterium atoms can bind with dangling bonds at the interface between the gate dielectric layer and the semiconductor to form a stable structure, thereby penetration of hot carriers can be prevented, leakage current can be reduced, and device properties and reliability can be enhanced. While the silicon sheet is doped with deuterium, nitrogen and barium, the amount of the doped silicon sheet applied in the method can be lowered, and the manufacture cost can be reduced accordingly.
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公开(公告)号：US20180002828A1
公开(公告)日：2018-01-04
申请号：US15548082
申请日：2016-01-29
发明人： Mark LOBODA
摘要： An apparatus for physical vapor transport growth of semiconductor crystals having a cylindrical vacuum enclosure defining an axis of symmetry; a reaction-cell support for supporting a reaction cell inside the vacuum enclosure; a cylindrical reaction cell made of material that is transparent to RF energy and having a height Hcell defined along the axis of symmetry; an RF coil provided around exterior of the vacuum enclosure and axially centered about the axis of symmetry, wherein the RF coil is configured to generate a uniform RF field along at least the height Hcell; and, an insulation configured for generating thermal gradient inside the reaction cell along the axis of symmetry. The ratio of height of the RF induction coil, measured along the axis of symmetry, to the height Hcell may range from 2.5 to 4.0 or from 2.8 to 4.0.
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公开(公告)号：US20170362736A1
公开(公告)日：2017-12-21
申请号：US15539586
申请日：2015-08-14
发明人： Sang Hee KIM , Young Ho JUNG
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206 , C30B15/22 , C30B15/30 , C30B30/04 , H01L21/02002
摘要： An embodiment provides a method for growing a silicon single crystalline ingot that may include: preparing a silicon melt solution in a crucible; probing a seed in the silicon melt solution; rotating the seed and the crucible while applying a horizontal magnetic field to the crucible; and pulling up an ingot grown from the silicon melt solution, wherein an interface between the growing ingot and the silicon melt solution is formed downward from a horizontal plane at 1 to 5 millimeters, and a bulk micro defects (BMD) size of the grown ingot is between 55 and 65 nanometers.
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8.发明申请公开(公告)号：US20170253991A1
公开(公告)日：2017-09-07
申请号：US15268083
申请日：2016-09-16
发明人： DEYUAN XIAO , RICHARD R. CHANG
CPC分类号： C30B15/22 , B24B7/228 , B24B9/065 , C30B15/04 , C30B15/203 , C30B29/06 , C30B30/04 , C30B33/00
摘要： This invention provides a method for growing monocrystalline silicon by applying Czochralski method comprising forming a melt of silicon-containing materials in a crucible and pulling the melt for monocrystalline silicon growth, which is characterized by, introducing a gas containing argon during formation of the melt, and, applying a magnetic field during the pulling step. This invention also provides a method for producing a wafer based on the above monocrystalline silicon.
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9.发明申请公开(公告)号：US20170226658A1
公开(公告)日：2017-08-10
申请号：US15515175
申请日：2015-10-07
CPC分类号： C30B15/14 , C30B9/06 , C30B15/20 , C30B15/30 , C30B15/305 , C30B17/00 , C30B19/04 , C30B19/062 , C30B19/067 , C30B19/08 , C30B19/10 , C30B29/36 , C30B30/04
摘要： A method and apparatus for manufacturing an SiC single crystal includes a graphite crucible for receiving an SiC solution with first and second induction heating coils wound around it. The first induction heating coil is located higher than the surface of the SiC solution. The second induction heating coil is located lower than the first induction heating coil. A power supply supplies a first alternating current to the first induction heating coil and supplies, to the second induction heating coil, a second alternating current having the same frequency as the first alternating current and flowing in the direction opposite to that of the first alternating current. The distance between the surface of the SiC solution and the position in the portion of the side wall of the crucible in contact with the SiC solution with the strength of a magnetic field at its maximum satisfies a predetermined equation.
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公开(公告)号：US09546436B2
公开(公告)日：2017-01-17
申请号：US14387728
申请日：2013-03-01
申请人： SUMCO CORPORATION
发明人： Daichi Yagi , Takahiro Abe
CPC分类号： C30B28/10 , C30B11/001 , C30B11/065 , C30B29/06 , C30B30/04 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： Casting polycrystalline silicon includes placing a bottomless cooling crucible divided at least partially in the axis direction into a plurality of parts in the peripheral direction and having an inner surface coated with a release agent containing nitrogen, in an induction coil of a chamber charged with an inert gas; melting a raw material of polycrystalline silicon in the bottomless cooling crucible by electromagnetic induction heating using the induction coil; and pulling out the molten silicon downward while cooling and solidifying it. Pullout of the solidified molten silicon is performed through adjusting the carbon concentration of the molten silicon to 4.0×1017 atoms/cm3 or more to 6.0×1017 atoms/cm3 or less, the oxygen concentration thereof to 0.3×1017 atoms/cm3 or more to 5.0×1017 atoms/cm3 or less, and the nitrogen concentration to 8.0×1013 atoms/cm3 or more to 1.0×1018 atoms/cm3 or less.
摘要翻译： 铸造多晶硅包括将一个无底部冷却坩埚在轴向方向上分成多个沿圆周方向的部分，并且在一个装有惰性气体的室的感应线圈中具有涂有含氮脱模剂的内表面 加油站; 使用感应线圈通过电磁感应加热在无底冷却坩埚中熔化多晶硅原料; 并向下拉出熔融硅，同时冷却和固化。 通过将熔融硅的碳浓度调整为4.0×10 17原子/ cm 3以上6.0×10 17原子/ cm 3以下，将其氧浓度调整为0.3×10 17原子/ cm 3以上，将其固化， 5.0×10 17原子/ cm 3以下，氮浓度为8.0×10 13原子/ cm 3以上至1.0×10 18原子/ cm 3以下。
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