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    Photo semiconductor device
    1.
    发明授权
    Photo semiconductor device 失效
    照片半导体器件

    公开(公告)号：US4740819A

    公开(公告)日：1988-04-26

    申请号：US680118

    申请日：1986-06-30

    申请人： Hirobumi Ouchi ,  Hiroshi Matsuda ,  Makoto Morioka ,  Masahiko Kawata ,  Kazuhiro Kurata ,  Yasushi Koga

    发明人： Hirobumi Ouchi ,  Hiroshi Matsuda ,  Makoto Morioka ,  Masahiko Kawata ,  Kazuhiro Kurata ,  Yasushi Koga

    IPC分类号： H01L31/00 ,  H01L31/107 ,  H01L29/90

    CPC分类号： H01L31/1075

    摘要： Disclosed is a photo-detective semiconductor device having, on a predetermined semiconductor substrate, at least a first semiconductor layer which exhibits a first conductivity type, a second semiconductor layer which is disposed on said first semiconductor layer, which has a forbidden band gap greater than that of said first semiconductor layer and which exhibits the first conductivity type, and a p-n junction which is formed by a region disposed in said second semiconductor layer and exhibiting a second conductivity type; characterized by comprising a third semiconductor layer which is disposed on said second semiconductor layer, which exhibits the first conductivity type and which has a surface protective function. The third semiconductor layer is usually made of a group III-V compound semiconductor of a quaternary system. By way of example, in a case where the first semiconductor layer is formed of InGaAsP and where the second semiconductor layer is formed of InP, the third semiconductor layer is made of InGaAsP, InGaAs or the like. A photo-detective semiconductor device of low dark current can be provided.

    摘要翻译： 公开了一种光检测半导体器件，其在预定半导体衬底上具有至少第一导电类型的第一半导体层，设置在所述第一半导体层上的禁止带隙大于第二半导体层的第二半导体层， 所述第一半导体层的表面具有第一导电类型，以及pn结，其由设置在所述第二半导体层中并呈现第二导电类型的区域形成; 其特征在于包括：第三半导体层，其设置在所述第二半导体层上，其具有第一导电类型并具有表面保护功能。 第三半导体层通常由四元系的III-V族化合物半导体制成。 作为示例，在第一半导体层由InGaAsP形成且第二半导体层由InP形成的情况下，第三半导体层由InGaAsP，InGaAs等构成。 可以提供低暗电流的光检测半导体器件。

    Optoelectronic device
    2.
    发明授权
    Optoelectronic device 失效
    光电器件

    公开(公告)号：US4816890A

    公开(公告)日：1989-03-28

    申请号：US915410

    申请日：1986-10-06

    申请人： Hirobumi Ouchi ,  Ichiro Fujiwara ,  Hiroshi Matsuda ,  Kazuhiro Ito ,  Kazuyuki Nagatsuma

    发明人： Hirobumi Ouchi ,  Ichiro Fujiwara ,  Hiroshi Matsuda ,  Kazuhiro Ito ,  Kazuyuki Nagatsuma

    IPC分类号： H01L31/107 ,  H01L27/14 ,  H01L31/00

    CPC分类号： H01L31/1075

    摘要： An avalanche photodiode including a substrate, a first semiconductor region of a first conductivity type having a relatively large band gap, a second semiconductor region of a second conductivity type having a relatively large band gap, and a third semiconductor region of the first conductivity type having a band gap smaller than the band gap of the first and second semiconductor regions, is disclosed in which, in order to suppress an increase in dark current and to cause the avalanche photodiode to operate on a low voltage, a fourth semiconductor region equal in conductivity type to and larger in impurity concentration than the first semiconductor region is formed in the first semiconductor region at a position below a central portion of a pn junction formed between the first semiconductor region and the second semiconductor region. The avalanche photodiode formed with this structure has low-noise and low operation voltage characteristics.

    摘要翻译： 一种雪崩光电二极管，包括基板，具有相对较大带隙的第一导电类型的第一半导体区域，具有相对较大带隙的第二导电类型的第二半导体区域，以及具有第一导电类型的第三半导体区域， 公开了一种小于第一和第二半导体区域的带隙的带隙，其中为了抑制暗电流的增加并使雪崩光电二极管在低电压下工作，等于导电性的第四半导体区域 在形成在第一半导体区域和第二半导体区域之间的pn结的中心部分下方的位置处，在第一半导体区域中形成并且具有比第一半导体区域更大的杂质浓度。 用这种结构形成的雪崩光电二极管具有低噪声和低工作电压特性。