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公开(公告)号：US4816890A
公开(公告)日：1989-03-28
申请号：US915410
申请日：1986-10-06
IPC分类号： H01L31/107 , H01L27/14 , H01L31/00
CPC分类号： H01L31/1075
摘要： An avalanche photodiode including a substrate, a first semiconductor region of a first conductivity type having a relatively large band gap, a second semiconductor region of a second conductivity type having a relatively large band gap, and a third semiconductor region of the first conductivity type having a band gap smaller than the band gap of the first and second semiconductor regions, is disclosed in which, in order to suppress an increase in dark current and to cause the avalanche photodiode to operate on a low voltage, a fourth semiconductor region equal in conductivity type to and larger in impurity concentration than the first semiconductor region is formed in the first semiconductor region at a position below a central portion of a pn junction formed between the first semiconductor region and the second semiconductor region. The avalanche photodiode formed with this structure has low-noise and low operation voltage characteristics.
摘要翻译： 一种雪崩光电二极管，包括基板，具有相对较大带隙的第一导电类型的第一半导体区域，具有相对较大带隙的第二导电类型的第二半导体区域，以及具有第一导电类型的第三半导体区域， 公开了一种小于第一和第二半导体区域的带隙的带隙，其中为了抑制暗电流的增加并使雪崩光电二极管在低电压下工作，等于导电性的第四半导体区域 在形成在第一半导体区域和第二半导体区域之间的pn结的中心部分下方的位置处，在第一半导体区域中形成并且具有比第一半导体区域更大的杂质浓度。 用这种结构形成的雪崩光电二极管具有低噪声和低工作电压特性。
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2.发明授权Fabricating a semiconductor photodetector by annealing to smooth the PN junction 失效通过退火制造半导体光电探测器以平滑PN结
公开(公告)号：US5098851A
公开(公告)日：1992-03-24
申请号：US474336
申请日：1990-02-02
IPC分类号： H01L31/18
CPC分类号： H01L31/184 , H01L31/1844 , H01L31/1864 , Y02E10/544 , Y02P70/521 , Y10S148/167 , Y10S438/965
摘要： A semiconductor photodetector is disclosed which comprises a pn junction formed in a semiconductor substrate and a pair of electrodes for applying a reverse bias to the pn junction, in which at least a part of the junction plane of the pn junction has been metamorphosed by enhanced diffusion. Hence the pn junction from an outer peripheral portion and a central portion is made smooth.
摘要翻译： 公开了一种半导体光电检测器，其包括形成在半导体衬底中的pn结和用于向pn结施加反向偏压的一对电极，其中pn结的至少一部分结面已经被增强的扩散变质 。 因此，使来自外周部和中央部的pn结成为平滑的。
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公开(公告)号：US4604577A
公开(公告)日：1986-08-05
申请号：US462765
申请日：1983-02-01
申请人： Hiroyoshi Matsumura , Toshio Katsuyama , Norio Ohta , Tsuneo Suganuma , Kazuyuki Nagatsuma , Yutaka Sugita
发明人： Hiroyoshi Matsumura , Toshio Katsuyama , Norio Ohta , Tsuneo Suganuma , Kazuyuki Nagatsuma , Yutaka Sugita
IPC分类号： G01R33/032 , G02F1/00 , G02F1/09 , G01R33/02 , G02B5/30
CPC分类号： G02F1/0036 , G01R33/0322
摘要： A measuring instrument of magnetic field utilizing Faraday rotation is disclosed in which a medium exhibiting Faraday rotation includes at least one thin magnetic garnet film magnetized in a propagation direction of light and having a composition expressed by a general formula R.sub.3-x Q.sub.x (Fe.sub.5-y M.sub.y)O.sub.12 (where R indicates at least one element selected from a group consisting of Y, La, Lu, Ca, Sm and Bi, Q indicates at least one element selected from a group consisting of Gd, Eu, Er, Tm, Tb, Yb, Ho and Dy, M is at least one element selected from a group consisting of Ga, Al, Ge, Si, Sc, Mn, In, V and Cr, the value of x lies in a range expressed by a formula 0.1.ltoreq.x.ltoreq.3.0, and the value of y lies in a range expressed by a formula 0.ltoreq.y.ltoreq.5.0). According to this instrument, stable measured values are obtained independently of temperature variation.
摘要翻译： 公开了利用法拉第旋转的磁场测量仪器，其中显示法拉第旋转的介质包括在光传播方向上被磁化并具有通式R3-xQx（Fe5-yMy）表示的组成的至少一个薄磁石榴石薄膜， O12（其中R表示选自Y，La，Lu，Ca，Sm和Bi中的至少一种元素，Q表示选自由Gd，Eu，Er，Tm，Tb，Yb组成的组中的至少一种元素） ，Ho和Dy，M是选自Ga，Al，Ge，Si，Sc，Mn，In，V和Cr中的至少一种元素，x的值在由式0.1表示的范围内， = x <= 3.0，y的值位于由公式0表示的范围内。 根据该仪器，独立于温度变化获得稳定的测量值。
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公开(公告)号：US5488386A
公开(公告)日：1996-01-30
申请号：US160655
申请日：1993-12-02
申请人： Toshio Yamagishi , Masakazu Nanba , Norifumi Egami , Kenkichi Tanioka , Mitsuhiro Kurashige , Kazutaka Tsuji , Yoshiyuki Kaneko , Tatsuo Makishima , Kazuyuki Nagatsuma , Tetsuya Ohshima , Yasushi Nakano
发明人： Toshio Yamagishi , Masakazu Nanba , Norifumi Egami , Kenkichi Tanioka , Mitsuhiro Kurashige , Kazutaka Tsuji , Yoshiyuki Kaneko , Tatsuo Makishima , Kazuyuki Nagatsuma , Tetsuya Ohshima , Yasushi Nakano
IPC分类号： H01J29/04 , H01J29/45 , H01J31/26 , H01J31/38 , H04N5/225 , H04N5/335 , H04N5/355 , H04N5/357 , H04N5/369 , H04N5/378 , G09G3/22
摘要： A photoconductive target having a transparent electrode layer and a photoconductive layer on a transparent substrate is disposed opposite to a group of integrated electron beam emitters having gate electrodes. A number of the electron emitters are activated to apply electron beams to the photoconductive target and the activated ones of the electron beam emitters are temporally changed over by an electron emitter selector circuit and a gate selector circuit. Signal charge generated and stored in the photoconductive layer is read. A time-series electric signal corresponding to a spatial distribution of the incident light is generated. A thin imaging apparatus suitable for a larger area is thus provided.
摘要翻译： 在透明基板上具有透明电极层和光电导层的光导体靶设置成与具有栅电极的一组集成电子束发射体相对。 多个电子发射器被激活以将电子束施加到光电导目标上，并且激活的电子束发射器在时间上被电子发射极选择器电路和栅选择器电路切换。 读取产生并存储在光电导层中的信号电荷。 产生对应于入射光的空间分布的时间序列电信号。 因此，提供了适合于较大面积的薄的成像装置。
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公开(公告)号：US4737015A
公开(公告)日：1988-04-12
申请号：US674770
申请日：1984-11-26
摘要： An optical waveguide comprising a layer formed on a substrate, having a mixed composition of silicon oxide and silicon nitride and having an arbitrary value of refractive index ranging between those of the silicon oxide and the silicon nitride. The layer of said mixed composition can be formed on the substrate to easily fabricate the optical waveguide of the present invention by conducting a sputtering method employing a Si target and controlling the composition of a sputtering gas composed of a mixture of N.sub.2 and O.sub.2 gases.
摘要翻译： 一种光波导，包括形成在基板上的层，其具有氧化硅和氮化硅的混合组成，并且具有范围在氧化硅和氮化硅的折射率之间的任意值。 所述混合组合物的层可以形成在基板上，以通过使用Si靶的溅射方法和控制由N 2和O 2气体的混合物组成的溅射气体的组成来容易地制造本发明的光波导。
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6.发明授权Optical D.C. electric-field measuring apparatus with optic sensing means exhibiting both electrooptic and photoelectric effects 失效具有光电感测装置的光学直流电场测量装置具有电光和光电效应
公开(公告)号：US4570064A
公开(公告)日：1986-02-11
申请号：US513314
申请日：1983-07-13
CPC分类号： G01R15/242 , G01R29/12
摘要： An electric-field measuring apparatus utilizing electrooptic effect for measuring the intensity of an electric DC field includes a material exhibiting both electrooptic effect and photoelectric effect or both a material exhibiting the electrooptic effect and a material exhibiting the photoelectric effect which material or materials are irradiated with a continuous light ray of a wavelength capable of inducing the electrooptic effect and an intermittently interrupted light ray of a wavelength capable of inducing the photoelectric effect.
摘要翻译： 利用电光效应测量电场的强度的电场测量装置包括既具有电光效应又具有光电效应的材料，或具有电光效应的材料和表现出光电效应的材料，该材料或材料被照射 能够引起电光效应的波长的连续光线以及能够引起光电效应的波长的间歇性中断的光线。
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公开(公告)号：US4490641A
公开(公告)日：1984-12-25
申请号：US278729
申请日：1981-06-29
申请人： Hiroshi Takeuchi , Shigeru Jyo mura , Kazuyuki Nagatsuma , Mitsutaka Hikita , Yukio Ito , Sakichi Ashida
发明人： Hiroshi Takeuchi , Shigeru Jyo mura , Kazuyuki Nagatsuma , Mitsutaka Hikita , Yukio Ito , Sakichi Ashida
CPC分类号： H03H9/562
摘要： The piezoelectric resonator of this invention consists of a piezoelectric ceramic plate which is polarized in the direction of thickness over the entire plate, two split electrodes are formed on one main surface of the piezoelectric ceramic plate, and an electrode is formed on the entire main surface opposed to the above main surface on which are formed the split electrodes. When an operating voltage is supplied to the above two split electrodes, the piezoelectric ceramic plate between the two split electrodes and the other electrode undergoes resonance in a thickness dilatational mode with a phase difference of 180.degree..
摘要翻译： 本发明的压电谐振器由在整个板上的厚度方向上极化的压电陶瓷板组成，在压电陶瓷板的一个主表面上形成两个分离电极，并且在整个主表面上形成电极 与形成分割电极的上述主表面相对。 当向上述两个分割电极提供工作电压时，两个分离电极和另一个电极之间的压电陶瓷板在相位差为180度的厚度膨胀模式下经历谐振。
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8.发明授权
公开(公告)号：US4333842A
公开(公告)日：1982-06-08
申请号：US178593
申请日：1980-08-15
CPC分类号： G10K11/36 , C30B15/00 , C30B29/34 , H01L41/18 , H01L41/1871
摘要： A piezoelectric single crystal which has a composition represented by a general formula (Ba.sub.2-x Sr.sub.x)TiSi.sub.2 O.sub.8, the value x lying within a range of 0.25.ltoreq.x.ltoreq.1.2; and a surface acoustic wave element which is so constructed as to employ surface waves that propagate on a cut plane perpendicular to the Z-axis of the single crystal, or surface waves that propagate in a specified direction on a cut plane containing the X-axis of the single crystal. The piezoelectric single crystal and the surface acoustic wave element employing it have the merits that the electromechanical coupling factor of the surface acoustic waves is great and that the temperature coefficient of delay time of the surface acoustic waves is small.
摘要翻译： 具有由通式（Ba2-xSrx）TiSi2O8表示的组成的压电单晶，其值x在0.25≤x≤1.2的范围内; 以及表面声波元件，其被构造成采用在垂直于单晶的Z轴的切割平面上传播的表面波，或者在包含X轴的切割平面上在指定方向上传播的表面波 的单晶。 使用它的压电单晶和表面声波元件具有表面声波的机电耦合系数大，表面声波的延迟时间的温度系数小的优点。
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公开(公告)号：US4243541A
公开(公告)日：1981-01-06
申请号：US940219
申请日：1978-09-06
申请人： Hiroshi Takeuchi , Yukio Ito , Shigeru Jyomura , Kunio Yamashita , Kazuyuki Nagatsuma , Sakichi Ashida , Mitsuru Ishii
发明人： Hiroshi Takeuchi , Yukio Ito , Shigeru Jyomura , Kunio Yamashita , Kazuyuki Nagatsuma , Sakichi Ashida , Mitsuru Ishii
IPC分类号： H01L41/187 , C04B35/46
CPC分类号： H01L41/187
摘要： Piezoelectric ceramics containing PbO and TiO.sub.2 as its principal constituents, and further containing 0.5 to 3.7 mol-% of Nd.sub.2 O.sub.3 and 0.2 to 1.5 mol-% of MnO.sub.2. Since the piezoelectric ceramics is low in the dielectric constant and is especially small in the temperature coefficient of the delay of surface acoustic waves, it is suitable for a surface acoustic wave device. Piezoelectric ceramics in which 0.3 to 3.3 mol-% of In.sub.2 O.sub.3 is further added to the above-mentioned composition has a still smaller temperature coefficient of the delay of surface acoustic waves, and it is also possible to make this coefficient zero.
摘要翻译： 含有PbO和TiO2作为主要成分的压电陶瓷，还含有0.5〜3.7mol％的Nd2O3和0.2〜1.5mol％的MnO2。 由于压电陶瓷的介电常数低，表面声波延迟的温度系数特别小，所以适用于表面声波装置。 在上述组合物中进一步添加0.3〜3.3mol％的In2O3的压电陶瓷的表面声波的延迟温度系数更小，也可以使该系数为零。
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公开(公告)号：US4001127A
公开(公告)日：1977-01-04
申请号：US490677
申请日：1974-07-22
摘要： In a process of preparing single crystals of strontium barium niobate of the type wherein melt of a mixture of strontium oxide, barium oxide and niobium pentoxide is prepared and a single crystal of strontium barium niobate is grown from the melt by using a seed crystal, the compositions included in region A or B shown in FIGS. 2 and 3 are used as the ternary compositions of strontium oxide, barium oxide and niobium pentoxide in the melt.
摘要翻译： 在制备其中制备氧化锶，氧化钡和五氧化二铌的混合物的熔体的铌酸锶单晶的方法中，使用晶种从熔体生长铌酸锶钡的单晶， 包含在图1和图2所示的区域A或B中的组合物。 2和3用作熔体中氧化锶，氧化钡和五氧化二铌的三元组成。
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