公开(公告)号：US20120086079A1

公开(公告)日：2012-04-12

申请号：US13253791

申请日：2011-10-05

Applicant: Hiroki KASAI ,  Yasuo ARAI ,  Takaki HATSUI

Inventor： Hiroki KASAI ,  Yasuo ARAI ,  Takaki HATSUI

IPC: H01L29/772 ,  H01L31/02

CPC classification number: H01L27/14607 ,  H01L27/1203 ,  H01L27/14659

Abstract: A semiconductor device includes: a first semiconductor layer of a first conductivity type; an insulation layer on the first semiconductor layer; a second semiconductor layer in the insulation layer; an active element in the second semiconductor layer; a first semiconductor region on the first semiconductor layer and of a second conductivity type; a second semiconductor region in the first semiconductor region and of the second conductivity type with a higher impurity concentration than the first semiconductor region; a first conductor in a through hole in the insulation layer and connected to the second semiconductor region; a second conductor above or within the insulation layer, the second conductor surrounding the first conductor such that an outside edge thereof is outside the second semiconductor region; a third conductor connecting the first and second conductors; and a fourth conductor connected to the first semiconductor layer.

Abstract translation: 半导体器件包括：第一导电类型的第一半导体层; 第一半导体层上的绝缘层; 绝缘层中的第二半导体层; 第二半导体层中的有源元件; 第一半导体区域和第二导电类型的第一半导体区域; 在第一半导体区域中的第二半导体区域和具有比第一半导体区域更高的杂质浓度的第二导电类型的第二半导体区域; 绝缘层中的通孔中的第一导体，并连接到第二半导体区; 绝缘层之上或之内的第二导体，所述第二导体围绕所述第一导体，使得其外边缘在所述第二半导体区域的外部; 连接第一和第二导体的第三导体; 以及连接到第一半导体层的第四导体。