公开(公告)号：US20080169526A1

公开(公告)日：2008-07-17

申请号：US11972932

申请日：2008-01-11

申请人： Hiroki WAKIMOTO ,  Masahito OTSUKI ,  Takashi SHIIGI

发明人： Hiroki WAKIMOTO ,  Masahito OTSUKI ,  Takashi SHIIGI

IPC分类号： H01L29/06

CPC分类号： H01L29/7811 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/404 ,  H01L29/66734 ,  H01L29/7813

摘要： A power semiconductor device is provided having a field plate that employs a thick metal film in an edge termination structure and which permits edge termination structure width reduction even with large side etching or etching variation, which exhibits superior long-term forward blocking voltage capability reliability, and which allows minimal forward blocking voltage capability variation. The edge termination structure has multiple ring-like p-type guard rings, a first insulating film covering the guard rings, and ring-like field plates, provided via the first insulating film atop the guard rings. The field plates have a polysilicon film and a thicker metal film. The polysilicon film is provided on a first guard ring via first insulating film, and a dual field plate made of the polysilicon film and metal film is provided on a second guard ring. The dual field plate is stacked via a second insulating film. The first and second guard rings alternate.

摘要翻译： 提供了一种功率半导体器件，其具有采用边缘端接结构中的厚金属膜的场板，即使具有优异的长期正向阻断电压能力可靠性的大的侧蚀刻或蚀刻变化也允许边缘终端结构宽度减小， 并且其允许最小的正向阻断电压能力变化。 边缘端接结构具有多个环状p型保护环，覆盖保护环的第一绝缘膜和通过护罩顶部上的第一绝缘膜提供的环状场板。 场板具有多晶硅膜和较厚的金属膜。 多晶硅膜通过第一绝缘膜设置在第一保护环上，并且由多晶硅膜和金属膜制成的双场板设置在第二保护环上。 双场板通过第二绝缘膜堆叠。 第一和第二保卫环交替出现。