公开(公告)号：US5111377A

公开(公告)日：1992-05-05

申请号：US663168

申请日：1991-03-01

申请人： Hiromasa Higasa ,  Fumihiko Ishikawa ,  Shigenori Matsumura ,  Sueo Sakata ,  Masayoshi Kumano

发明人： Hiromasa Higasa ,  Fumihiko Ishikawa ,  Shigenori Matsumura ,  Sueo Sakata ,  Masayoshi Kumano

IPC分类号： H02J3/38

CPC分类号： H02J3/38 ,  H02J2003/388

摘要： In a power interconnection system between an electric power system and a power converter which makes AC power from a DC power source, a positive feed-back loop is constituted so as to include a frequency deviation detector, a band-pass filter, an inert zone circuit, an amplifier, an adder, a phase controller, an inverter controller, an inverter and an interconnection reactor. Thereby a sufficiently great frequency fluctuation is made after opening of a branch line switch, so as to produce a frequency abnormality signal to be given to a disconnection switch; and disconnection is made certainly.

公开(公告)号：US5051375A

公开(公告)日：1991-09-24

申请号：US377276

申请日：1989-07-10

申请人： Sueo Sakata ,  Yasunori Oka ,  Toshio Naritomi

发明人： Sueo Sakata ,  Yasunori Oka ,  Toshio Naritomi

IPC分类号： H01L21/304 ,  H01L21/322

CPC分类号： H01L21/02016 ,  H01L21/3046 ,  H01L21/3221 ,  Y10S148/024 ,  Y10S148/06

摘要： Disclosed is a method of producing a semiconductor wafer through gettering by means of sand blasting in a semiconductor wafer fabrication process. The method includes blasting abrasives each having a configuration at least similar to a sphere against a back surface of the semiconductor wafer, causing shear stress having a maximum point in the interior of the wafer to be generated, whereby damage is produced mainly in the interior of the wafer.

摘要翻译： 公开了通过在半导体晶片制造工艺中通过喷砂来吸气来制造半导体晶片的方法。 该方法包括喷砂研磨剂，其各自具有与球体相对于半导体晶片的后表面至少相似的构造，使得产生在晶片内部具有最大点的剪切应力，从而主要在内部产生损伤 晶圆。