公开(公告)号：US06835110B2

公开(公告)日：2004-12-28

申请号：US10212758

申请日：2002-08-07

申请人： Hironobu Mizuno ,  Masaharu Naka ,  Koki Nukanobu

发明人： Hironobu Mizuno ,  Masaharu Naka ,  Koki Nukanobu

IPC分类号： H01J902

CPC分类号： H01J9/027

摘要： To provide a method for manufacturing an electron source having electron-emitting devices with excellent electron-emitting property arranged on a substrate and enabling an image-forming apparatus capable of displaying an image with high brightness and uniformity to be enhanced in terms of screen size and production scale. The method for manufacturing the electron source includes a step of disposing a plurality of units and a plurality of wirings connected to the plurality of units on a substrate, each unit including a polymer film and a pair of electrodes with the polymer film interposed therebetween, and a step of forming electron-emitting devices from the plurality of units by repeatedly performing a process including a selecting substep of selecting a desired number of units from the plurality of units, a resistance-reducing substep of reducing resistance of the polymer films of the selected units and a gap-forming substep of forming a gap in each of the films formed by the resistance-reducing substep.

摘要翻译： 为了提供一种制造具有电子发射器件的电子源的方法，该电子源具有优良的电子发射特性，该电子发射器件具有优良的电子发射特性，该电子发射器件具有优良的电子发射特性，其布置在基片上， 生产规模。 制造电子源的方法包括将多个单元和连接到多个单元的多个布线布置在基板上的步骤，每个单元包括聚合物膜和一对电极，聚合物膜插入其间，并且 通过重复执行包括从多个单元中选择期望数量的单元的子步骤的选择的方法从多个单元形成电子发射器件的步骤，降低所选择的聚合物膜的电阻的电阻减少子步骤 单元和形成间隙的间隙形成子步骤，在由阻力减小子步骤形成的每个膜中形成间隙。