JOSEPHSON DEVICE, METHOD OF FORMING JOSEPHSON DEVICE AND SUPERCONDUCTOR CIRCUIT
    2.
    发明申请
    JOSEPHSON DEVICE, METHOD OF FORMING JOSEPHSON DEVICE AND SUPERCONDUCTOR CIRCUIT 审中-公开
    JOSEPHSON器件,形成JOSEPHSON器件和超导体电路的方法

    公开(公告)号:US20120012818A1

    公开(公告)日:2012-01-19

    申请号:US13222119

    申请日:2011-08-31

    IPC分类号: H01L39/12

    摘要: A Josephson device includes a first superconducting electrode layer, a barrier layer, and a second superconducting electrode layer that are successively stacked. The first and second superconducting electrode layers are made of an oxide superconductor material having (RE)1(AE)2Cu3Oy as a main component, where an element RE is at least one element selected from a group consisting of Y, La, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb and Lu, and an element AE is at least one element selected from a group consisting of Ba, Sr and Ca. The barrier layer is made of a material that includes the element RE, the element AE, Cu and oxygen, where the barrier layer has a composition different from compositions of the first and second superconducting electrode layers.

    摘要翻译: 约瑟夫森器件包括依次层叠的第一超导电极层,阻挡层和第二超导电极层。 第一和第二超导电极层由具有(RE)1(AE)2Cu 3 O y作为主要成分的氧化物超导体材料制成,其中元素RE为选自Y,La,Pr,Nd中的至少一种元素 ,Sm,Eu,Gd,Dy,Ho,Er,Tm,Yb和Lu,元素AE为选自Ba,Sr和Ca中的至少一种元素。 阻挡层由包括元素RE,元素AE,Cu和氧的材料制成,其中阻挡层具有与第一和第二超导电极层的组成不同的组成。