EVAPORATING MATERIAL AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    EVAPORATING MATERIAL AND METHOD OF MANUFACTURING THE SAME 审中-公开
    蒸发材料及其制造方法

    公开(公告)号:US20110189498A1

    公开(公告)日:2011-08-04

    申请号:US13119993

    申请日:2009-10-06

    IPC分类号: C25D1/08 B22D23/04 B22D29/00

    摘要: There is provided an evaporating material of thin plate shape which can be manufactured at a reduced cost and at high productivity, the evaporating material being adapted for use in enhancing the coercive force of neodymium-iron-boron sintered magnet by heat treatment while evaporating Dy in vacuum or in reduced-pressure inert gas atmosphere. The evaporating material of this invention has a core member la made of a fire-resistant metal having a multiplicity of through holes, and is made by melting a rare-earth metal or an alloy thereof so as to get adhered to, and solidified on, the core member. In this case, the above-mentioned adhesion is performed by dipping the core member into a molten bath of the rare-earth metal or an alloy thereof, and pulling it out of the molten bath.

    摘要翻译: 提供了一种薄板状的蒸发材料,其可以以低成本和高生产率制造,该蒸发材料适用于通过热处理提高钕铁硼烧结磁体的矫顽力,同时将Dy 真空或在减压惰性气体气氛中。 本发明的蒸发材料具有由具有多个通孔的耐火金属制成的芯部件1a,并且通过熔化稀土金属或其合金制成,以使其粘附并固化, 核心成员。 在这种情况下,通过将芯构件浸入稀土金属或其合金的熔池中并将其从熔浴中拉出来进行上述粘合。

    Silicon purification method
    2.
    发明授权
    Silicon purification method 有权
    硅精制法

    公开(公告)号:US08409319B2

    公开(公告)日:2013-04-02

    申请号:US13058471

    申请日:2009-08-11

    IPC分类号: C01B33/037 C22B9/22

    CPC分类号: C01B33/037

    摘要: A silicon purification method includes a solidification purification step comprising: preparing the base material to be purified, loading the base material into a crucible, irradiating part of the base material, and fully melting the base material; gradually solidifying the base material by gradually weakening an electron beam so that the solidification proceeds until the solidifying portion occupies a first predetermined ratio of the base material; loading the remnant of the base material into the crucible, and fully melting the remnant of the base material by irradiating the entire area of the remnant of the base material with the electron beam; gradually solidifying the molten metal portion by gradually weakening the electron beam so that the solidification proceeds until the solidifying portion occupies a second predetermined ratio of the molten metal portion; and removing an unsolidified molten metal portion.

    摘要翻译: 一种硅精制方法,其特征在于,包括:准备所述被净化基材,将所述基材装载到坩埚中,照射所述基材的一部分,使所述基材完全熔融的步骤; 通过逐渐削弱电子束使基材逐渐固化,使凝固进行直到固化部分占据基材的第一预定比例; 将基材的残留物加载到坩埚中,并通过用电子束照射基材的剩余物的整个区域来完全熔化基材的残留物; 通过逐渐削弱电子束逐渐使熔融金属部分固化,使得凝固进行直到凝固部分占据熔融金属部分的第二预定比例; 并除去未固化的熔融金属部分。

    SILICON PURIFICATION METHOD
    3.
    发明申请
    SILICON PURIFICATION METHOD 有权
    硅氧烷纯化方法

    公开(公告)号:US20110132142A1

    公开(公告)日:2011-06-09

    申请号:US13058471

    申请日:2009-08-11

    IPC分类号: C22B9/22

    CPC分类号: C01B33/037

    摘要: A silicon purification method includes a solidification purification step in which metal impurities are removed by irradiating a base material made of metallic silicon with an electron beam. The solidification purification step sequentially includes: preparing the base material to be purified at one time, loading a part of the base material into a water-cooled crucible, irradiating, with the electron beam, the entire area of the part of the loaded base material that is disposed under a high vacuum atmosphere, and thereby fully melting the part of the base material; gradually solidifying the molten part of the base material from a molten metal bottom thereof toward a molten metal surface thereof by gradually weakening an output of the electron beam so that the solidification proceeds until the solidifying portion occupies a first predetermined ratio of the total of the base material; further loading the remnant of the base material into the water-cooled crucible, and fully melting the remnant of the base material by irradiating the entire area of the remnant of the base material with the electron beam; gradually solidifying the molten metal portion from a bottom thereof toward a molten metal surface thereof by gradually weakening an output of the electron beam so that the solidification proceeds until the solidifying portion occupies a second predetermined ratio of the total of the molten metal portion; and removing an unsolidified molten metal portion.

    摘要翻译: 硅纯化方法包括固化纯化步骤,其中通过用电子束照射由金属硅制成的基底材料去除金属杂质。 固化精制工序依次包括:准备一次要净化的基材,将一部分基材装入水冷坩埚中,用电子束照射被加载基材的一部分的整个区域 其设置在高真空气氛下,从而使基材的一部分完全熔化; 通过逐渐削弱电子束的输出,使基体材料的熔融部分从熔融金属底部朝向其熔融金属表面逐渐固化,使得凝固进行直至凝固部分占基体总数的第一预定比例 材料; 进一步将基材的残留物加载到水冷坩埚中,并通过用电子束照射基材的残留物的整个区域来完全熔化基材的残留物; 通过逐渐削弱电子束的输出,使熔融金属部分的底部朝向其熔融金属表面逐渐固化,使得固化进行直到凝固部分占据熔融金属部分总数的第二预定比率; 并除去未固化的熔融金属部分。

    Method for refining metal
    4.
    发明授权
    Method for refining metal 有权
    金属精炼方法

    公开(公告)号:US08404016B2

    公开(公告)日:2013-03-26

    申请号:US13056496

    申请日:2009-07-30

    IPC分类号: C22B9/04 C22B9/22 C01B33/037

    摘要: A method for refining a metal such that, after a base material derived from the metal is melted by being irradiated with an electron beam, the base material is refined by solidifying the base material which was melted, the method including: a step melting all of the base material by irradiating the electron beam over an entire surface of the base material loaded inside a water-cooled crucible placed inside a high vacuum atmosphere; a step gradually solidifying the base material which was melted from a molten metal bottom part of the base material which was melted toward a molten metal surface part at a side being irradiated by the electron beam by gradually weakening an output of the electron beam while maintaining a condition in which the base material which was melted is irradiated with the electron beam; and a step removing a molten metal part which is not solidified, after the base material which was melted is solidified to a certain percentage.

    摘要翻译: 一种精制金属的方法,其特征在于,在将来自金属的基材通过照射电子束熔融后,通过使被熔化的基材固化来使基材精制,该方法包括: 通过在放置在高真空气氛内的水冷坩埚内装载在基材的整个表面上照射电子束的基材; 从基材的熔融金属底部熔化的基材逐渐固化,该基材通过逐渐削弱电子束的输出,同时保持电子束的输出,从熔化的金属表面部分向熔融金属表面部分熔化 用电子束照射被熔化的基材的状态; 在熔化的基材固化一定比例后,除去不固化的熔融金属部分的步骤。

    Secondary cooling apparatus and casting apparatus
    5.
    发明授权
    Secondary cooling apparatus and casting apparatus 有权
    二次冷却装置和铸造装置

    公开(公告)号:US08056610B2

    公开(公告)日:2011-11-15

    申请号:US12729597

    申请日:2010-03-23

    IPC分类号: B22D11/124

    摘要: A secondary cooling apparatus capable of gradually cooling cast thin pieces and a cast apparatus that uses it are provided. A comb tooth-shaped device is arranged inside a vessel of the secondary cooling apparatus; the cast thin pieces are piled on the comb tooth-shaped device; and crushed small pieces are placed thereon. After the cast thin pieces and the crushed small pieces are gradually cooled, the cast thin pieces are crushed by a pressing device. The crushed small pieces are rapidly cooled by being in contact with a surface of a bottom wall and side faces of cooling teeth. Nd-rich phases or R-rich phases can be annealed by the gradual cooling, and after the crushed small pieces are rapidly cooled to its oxidation temperature or below, the crushed small pieces can be taken out to the air atmosphere.

    摘要翻译: 提供能够逐渐冷却铸造薄片的二次冷却装置和使用它的铸造装置。 梳齿形装置设置在二次冷却装置的容器内; 浇铸薄片堆放在梳齿装置上; 并将碎片放在其上。 铸造的薄片和被粉碎的小块逐渐冷却后,铸造的薄片被压制装置压碎。 粉碎的小件通过与底壁的表面和冷却齿的侧面接触而迅速冷却。 富Nd相或富R相可以通过逐渐冷却退火,并且在将粉碎的小碎片快速冷却至其氧化温度或更低温度之后,可以将破碎的小碎片送出到空气中。

    METHOD FOR REFINING METAL
    6.
    发明申请
    METHOD FOR REFINING METAL 有权
    精炼金属的方法

    公开(公告)号:US20110126670A1

    公开(公告)日:2011-06-02

    申请号:US13056496

    申请日:2009-07-30

    IPC分类号: C22B9/22

    摘要: A method for refining a metal such that, after a base material derived from the metal is melted by being irradiated with an electron beam, the base material is refined by solidifying the base material which was melted, the method including: a step melting all of the base material by irradiating the electron beam over an entire surface of the base material loaded inside a water-cooled crucible placed inside a high vacuum atmosphere; a step gradually solidifying the base material which was melted from a molten metal bottom part of the base material which was melted toward a molten metal surface part at a side being irradiated by the electron beam by gradually weakening an output of the electron beam while maintaining a condition in which the base material which was melted is irradiated with the electron beam; and a step removing a molten metal part which is not solidified, after the base material which was melted is solidified to a certain percentage.

    摘要翻译: 一种精制金属的方法,其特征在于,在将来自金属的基材通过照射电子束熔融后,通过使被熔化的基材固化来使基材精制,该方法包括: 通过在放置在高真空气氛内的水冷坩埚内装载在基材的整个表面上照射电子束的基材; 从基材的熔融金属底部熔化的基材逐渐固化,该基材通过逐渐削弱电子束的输出,同时保持电子束的输出,从熔化的金属表面部分向熔融金属表面部分熔化 用电子束照射被熔化的基材的状态; 在熔化的基材固化一定比例后,除去不固化的熔融金属部分的步骤。

    Starting powder for producing sintered-aluminum alloy, method for
producing sintered parts, and sintered aluminum alloy
    8.
    发明授权
    Starting powder for producing sintered-aluminum alloy, method for producing sintered parts, and sintered aluminum alloy 失效
    用于生产烧结铝合金的起始粉末,烧结部件的制造方法和烧结铝合金

    公开(公告)号:US5466277A

    公开(公告)日:1995-11-14

    申请号:US219700

    申请日:1994-03-30

    CPC分类号: C22C1/0416 Y10S75/95

    摘要: A sintered Al-alloy, which has a composition of 0.2 to 2.0% of Mg, 10.0 to 35.0% of Si, from 0.2 to 4.0% of Cu, and Al and unavoidable impurities in balance, is produced by using a mixture of the main powder (10.0-35.0% of Si, 0.2-2.0% of Cu, and Al and unavoidable impurities in balance) and at least one metal or mother-alloy powder selected from (a)-(i): (a) Mg powder; (b) Al--Mg powder; (c) Al--Cu powder; (d) Al--Mg--Si powder; (e) Al--Cu--Si powder; (f) Al--Mg--Cu powder; (g) Al--Mg--Cu--Si powder; (h) Mg--Cu powder; and, (i) Mg--Cu--Si powder.

    摘要翻译: 通过使用主要的混合物制备烧结的Al合金,其组成为0.2-2.0%的Mg,10.0〜35.0%的Si,0.2〜4.0%的Cu,Al和不可避免的杂质, 粉末(10.0-35.0%的Si,0.2-2.0%的Cu和Al以及不可避免的杂质)和至少一种选自(a) - (i):(a)Mg粉末的金属或母体合金粉末; (b)Al-Mg粉末; (c)Al-Cu粉末; (d)Al-Mg-Si粉末; (e)Al-Cu-Si粉末; (f)Al-Mg-Cu粉末; (g)Al-Mg-Cu-Si粉末; (h)Mg-Cu粉末; 和(i)Mg-Cu-Si粉末。

    Sintered aluminum-alloy
    10.
    发明授权
    Sintered aluminum-alloy 失效
    烧结铝合金

    公开(公告)号:US5292358A

    公开(公告)日:1994-03-08

    申请号:US962709

    申请日:1992-10-19

    CPC分类号: C22C21/00 C22C1/0416

    摘要: A sintered aluminum-alloy consisting essentially in weight of 0.1-2.0% Mg, 0.1-2.0% Si, 0.2-6.0% Cu and Al and unavoidable impurities in balance is produced by sintering a mixture of a first aluminum-alloy starting powder and at least one second aluminum-alloy starting powder. The first aluminum-alloy powder consists of 0.1-3.0% Cu and Al and unavoidable impurities in balance and the second aluminum-alloy is selected from (1) an aluminum alloy starting powder consisting of 4-20% Mg, 12-30% Si and Al and unavoidable impurities in balance and (2) an aluminum-alloy starting powder consisting of from 0.1-20.0% Mg, 1-20% Si, 30-50% Cu and Al and unavoidable impurities in balance.

    摘要翻译: 通过将第一铝合金起始粉末和第一铝合金起始粉末的混合物烧结,基本上以0.1-2.0%Mg,0.1-2.0%Si,0.2-6.0%Cu和Al的重量和不可避免的杂质平衡地组成的烧结铝合金 至少一秒的铝合金起始粉末。 第一铝合金粉末由0.1-3.0%的Cu和Al和不可避免的杂质组成,第二铝合金选自(1)由4-20%的Mg,12-30%的Si组成的铝合金起始粉末 和Al和不可避免的杂质,以及(2)由0.1-20.0%Mg,1-20%Si,30-50%Cu和Al组成的铝合金起始粉末和余量的不可避免的杂质。