摘要:
A magnetic sensor having first to fourth magneto-resistive elements, where the first and second magneto-resistive elements are connected at respective ends through a first connecting portion in a central region, and the third and fourth magneto-resistive elements are connected at respective ends through a second connecting portion that is parallel to the first connecting portion. The first and fourth magneto-resistive elements are connected at respective other ends through a third connecting portion, and the second and third magneto-resistive elements are connected at respective other ends through a fourth connecting portion. Depending on an external signal magnetic field, resistance values of the first and third magneto-resistive elements change in a same increasing or decreasing direction, whereas resistance values of the second and fourth magneto-resistive elements change in an increasing or decreasing direction opposite to the direction of the first and third magneto-resistive elements.
摘要:
A magneto-resistance effect element for a sensor to sense a variation in externally applied magnetism includes a pinned layer having a fixed magnetization direction, a free layer having a magnetization direction which varies in response to an external magnetic field, and an intermediate layer provided between the pinned layer and the free layer. The pinned layer has a planar shape which is long in the fixed magnetization direction and which is short in a direction orthogonal to the fixed magnetization direction. Moreover, the pinned layer preferably has a planar shape in which the pinned layer is divided into a plurality of sections.
摘要:
A magneto-resistance effect element for a sensor to sense a variation in externally applied magnetism includes a pinned layer having a fixed magnetization direction, a free layer having a magnetization direction which varies in response to an external magnetic field, and an intermediate layer provided between the pinned layer and the free layer. The pinned layer has a planar shape which is long in the fixed magnetization direction and which is short in a direction orthogonal to the fixed magnetization direction. Moreover, the pinned layer preferably has a planar shape in which the pinned layer is divided into a plurality of sections.
摘要:
A magnetoresistive element includes magnetoresistive films each having an upper surface and a lower surface, and conductors combining the magnetoresistive films in series and including top electrodes and bottom electrodes. Each one of the top electrodes and corresponding one of the bottom electrodes oppose each other to sandwich corresponding one of the magnetoresistive films. Each electrode of the top electrodes and the bottom electrodes includes a stem section and a branch section, the stem section extending in a direction along a series alignment direction of the magnetoresistive films, and the branch section extending along the lamination plane in a direction intersecting a direction in which the stem section extends. The branch section in the top electrode is in contact with an upper surface of the corresponding magnetoresistive film, and the branch section in the bottom electrode is in contact with a lower surface of the corresponding magnetoresistive film.
摘要:
A magnetic sensor includes a spin valve-type magneto-resistive element, a voltage detection part, a coil, and a current control part, the coil being configured to apply a measuring magnetic field to the spin valve-type magneto-resistive element upon application of a current, the voltage detection part being configured to output a detection signal to the current control part upon detecting an output voltage of the spin valve-type magneto-resistive element reaching a predetermined voltage value, the current control part being configured to control the current to unidirectionally increase or unidirectionally decrease a strength of the measuring magnetic field from an initial value, but upon input of the detection signal, control the current to return the strength of the measuring magnetic field to the initial value, the initial value being a magnetic field strength where the spin valve-type magneto-resistive element reaches saturation magnetization.
摘要:
A magnetic sensor includes a spin valve-type magneto-resistive element, a voltage detection part, a coil, and a current control part, the coil being configured to apply a measuring magnetic field to the spin valve-type magneto-resistive element upon application of a current, the voltage detection part being configured to output a detection signal to the current control part upon detecting an output voltage of the spin valve-type magneto-resistive element reaching a predetermined voltage value, the current control part being configured to control the current to unidirectionally increase or unidirectionally decrease a strength of the measuring magnetic field from an initial value, but upon input of the detection signal, control the current to return the strength of the measuring magnetic field to the initial value, the initial value being a magnetic field strength where the spin valve-type magneto-resistive element reaches saturation magnetization.
摘要:
A magnetoresistive element includes magnetoresistive films each having an upper surface and a lower surface, and conductors combining the magnetoresistive films in series and including top electrodes and bottom electrodes. Each one of the top electrodes and corresponding one of the bottom electrodes oppose each other to sandwich corresponding one of the magnetoresistive films. Each electrode of the top electrodes and the bottom electrodes includes a stem section and a branch section, the stem section extending in a direction along a series alignment direction of the magnetoresistive films, and the branch section extending along the lamination plane in a direction intersecting a direction in which the stem section extends. The branch section in the top electrode is in contact with an upper surface of the corresponding magnetoresistive film, and the branch section in the bottom electrode is in contact with a lower surface of the corresponding magnetoresistive film.
摘要:
While an emitting position of light from an optical waveguide and a magnetic pole end part are made closer to each other, high-density writing onto a magnetic recording medium is realized.A thermally assisted magnetic head comprises a main magnetic pole layer having a magnetic pole end part exposed at a medium-opposing surface opposing a magnetic disk, and an optical waveguide for deflecting laser light incident thereon into a laminating direction. The main magnetic pole layer is positioned on a side where the light is deflected by the optical waveguide. The magnetic pole end part projects to the side where the light is deflected by the optical waveguide. The optical waveguide projects more than the magnetic pole end part on the medium-opposing surface side.
摘要:
A magnetic sensor includes a first detection unit and a second detection unit. The first detection unit calculates a first detection angle which is a detected value of a first angle that a direction of an external magnetic field in a first position forms with respect to a first direction. The second detection unit calculates a second detection angle which is a detected value of a second angle that the direction of the external magnetic field in a second position forms with respect to a second direction. The first detection angle includes a first angular error. The second detection angle includes a second angular error. The first angular error and the second angular error differ in phase by an odd number of times ½ of the error period.
摘要:
A magnetic sensor includes a bridge circuit with a first, a second, a third, and a fourth resistor annularly and electrically connected together in this order, and a compensation resistor. The compensation resistor is connected to a first point between the fourth resistor and the first resistor. The first to fourth resistors include a first to fourth tunnel magneto-resistance element, respectively. Each of the magnetization directions in the magnetization fixed layers in the second and fourth magneto resistance elements is opposite to the magnetization direction in the magnetization fixed layer in the first magneto resistance element. The magnetization direction in the magnetization fixed layer in the third magneto resistance element is the same as the magnetization direction in the magnetization fixed layer in the first magneto resistance element. The resistance of the compensation resistor varies with a period of 180 degrees with respect to a rotation angle of the external field.