公开(公告)号：US20190064790A1

公开(公告)日：2019-02-28

申请号：US16079912

申请日：2017-03-02

Applicant: Hitachi, Ltd.

Inventor： Hiroki YAMAMOTO ,  Masaaki MUKAIDE ,  Yoshinari HORI ,  Takeshi TERASAKI

IPC: G05B23/02 ,  G06Q10/06

Abstract: This manufacturing facility management optimization device: on the basis of an operation condition of a manufacturing facility, creates, in a simulated manner in time series, an operation state which includes a measurement value, product yield, and quantities of raw materials consumed, of the manufacturing facility; detects an anomaly from the created operation state; identifies maintenance which corresponds to the detected anomaly, corrects the operation condition on the basis of the identified maintenance, and creates a plurality of post-correction operation condition candidates; creates, in a simulated manner in time series, a plurality of post-correction operation state candidates on the basis of the plurality of post-correction operation condition candidates; on the basis of the product yield and the quantities of raw materials consumed in the plurality of pre- and post-correction operation state candidates, and a unit price, creates a management index for the operation state and each of the plurality of post-correction operation state candidates; and, from among the plurality of post-correction operation condition candidates, identifies the candidate which optimizes the management index.

公开(公告)号：US20190287896A1

公开(公告)日：2019-09-19

申请号：US16318194

申请日：2017-03-17

Applicant: Hitachi, Ltd.

Inventor： Tomohisa SUZUKI ,  Takeshi TERASAKI

IPC: H01L23/522 ,  H01L23/00 ,  H01L29/16 ,  H01L25/07 ,  H01L25/00

Abstract: Provided is a semiconductor module enabling to effectively reduce, with a relatively simple structure, a thermal strain occurring in a bonding section between a semiconductor chip and other conductor members. The semiconductor module is characterized by being provided with: a first wiring layer; a semiconductor element bonded on the first wiring layer via a first bonding layer; a first electrode bonded on the semiconductor element via a second bonding layer; a second electrode connected on the first electrode; and a second wiring layer connected on the second electrode. The semiconductor module is also characterized in that: the width of the second electrode, said width being in the short-side direction, is more than the thickness of the first electrode; and the second electrode is disposed at a position off the center position of the semiconductor element.