公开(公告)号：US20220108940A1

公开(公告)日：2022-04-07

申请号：US17429464

申请日：2020-01-15

Applicant: Hitachi Astemo, Ltd.

Inventor： Yusuke TAKAGI ,  Ryo TERAYAMA ,  Ko HAMAYA ,  Osamu IKEDA

IPC: H01L23/495

Abstract: A power semiconductor module, which is a semiconductor device, includes a semiconductor element 155 and a lead frame 318 that is disposed to face the semiconductor element 155 and connected to the semiconductor element 155 by a solder material 162. The lead frame 318 has the top surface 331 including a surface facing the semiconductor element 155, and the side surface 334 connected to the peripheral edge portion 333 of the top surface 331 at a predetermined angle with respect to the top surface 331. The top surface of the lead frame 318 includes the solder surface 332 that is in contact with the solder material 162 and the solder resistance surface on which the solder material 162 is less wettable than on the solder surface 332. The solder resistance surface is formed to surround the periphery of the solder surface 332. In this manner, when the semiconductor element and the lead frame are solder-joined in the semiconductor device, the region where the solder wet-spreads is appropriately controlled.