公开(公告)号：US20200219243A1

公开(公告)日：2020-07-09

申请号：US16638033

申请日：2017-08-23

Applicant: Hitachi High-Technologies Corporation

Inventor： Takeyoshi OHASHI ,  Atsuko SHINTANI ,  Masami IKOTA ,  Kazuhisa HASUMI

IPC: G06T7/00 ,  G06T7/60 ,  G01N23/22 ,  G01B15/04

Abstract: An object of the invention is to quantitatively evaluate crystal growth amount in a wide range from an undergrowth state to an overgrowth state with nondestructive inspection. By using a plenty of image feature values such as pattern brightness, a pattern area and a pattern shape which are extracted from an SEM image, and depending on whether brightness inside a pattern is lower than brightness outside the pattern (401), undergrowth and overgrowth is determined (402, 405). Based on a brightness difference or the pattern area, a growth amount index or a normality index of crystal growth in a concave pattern such as a hole pattern or a trench pattern is calculated (404, 407).