公开(公告)号：US20190214222A1

公开(公告)日：2019-07-11

申请号：US16325613

申请日：2016-08-23

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kotoko URANO ,  Zhaohui CHENG ,  Takeyoshi OHASHI ,  Hideyuki KAZUMI

IPC: H01J37/153 ,  H01J37/244 ,  H01J37/22

CPC classification number: H01J37/153 ,  H01J37/222 ,  H01J37/244 ,  H01J2237/1534 ,  H01J2237/2448

Abstract: A charged particle beam device using a multi-pole type aberration corrector includes: a charged particle source which generates a primary charged particle beam; an aberration correction optical system which corrects aberrations of the primary charged particle beam; a detection unit which detects a secondary charged particle generated from a sample irradiated with the primary charged particle beam whose aberrations have been corrected; an image forming unit which forms a charged particle image of the sample from a signal obtained by detecting the secondary charged particle; an aberration correction amount calculation unit which processes the charged particle image, separates aberrations having different symmetries, selects an aberration to be preferentially corrected from the separated aberrations, and calculates a correction amount of the aberration correction optical system; and an aberration correction optical system control unit which controls the aberration correction optical system based on the calculated correction amount.

公开(公告)号：US20200219243A1

公开(公告)日：2020-07-09

申请号：US16638033

申请日：2017-08-23

Applicant: Hitachi High-Technologies Corporation

Inventor： Takeyoshi OHASHI ,  Atsuko SHINTANI ,  Masami IKOTA ,  Kazuhisa HASUMI

IPC: G06T7/00 ,  G06T7/60 ,  G01N23/22 ,  G01B15/04

Abstract: An object of the invention is to quantitatively evaluate crystal growth amount in a wide range from an undergrowth state to an overgrowth state with nondestructive inspection. By using a plenty of image feature values such as pattern brightness, a pattern area and a pattern shape which are extracted from an SEM image, and depending on whether brightness inside a pattern is lower than brightness outside the pattern (401), undergrowth and overgrowth is determined (402, 405). Based on a brightness difference or the pattern area, a growth amount index or a normality index of crystal growth in a concave pattern such as a hole pattern or a trench pattern is calculated (404, 407).

公开(公告)号：US20180190469A1

公开(公告)日：2018-07-05

申请号：US15741038

申请日：2015-07-01

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Zhaohui CHENG ,  Tomonori NAKANO ,  Kotoko URANO ,  Takeyoshi OHASHI ,  Yasunari SOHDA ,  Hideyuki KAZUMI

IPC: H01J37/153 ,  H01J37/147 ,  H01J37/141 ,  H01J37/244 ,  H01J37/22

CPC classification number: H01J37/153 ,  H01J37/141 ,  H01J37/1471 ,  H01J37/1474 ,  H01J37/222 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/1405 ,  H01J2237/1501 ,  H01J2237/1532 ,  H01J2237/1534 ,  H01J2237/1536 ,  H01J2237/221 ,  H01J2237/26 ,  H01J2237/2806 ,  H01J2237/2809

Abstract: In order to provide an aberration correction system that realizes a charged particle beam of which the anisotropy is reduced or eliminated on a sample surface even in the case where there is magnetic interference between pole stages of an aberration corrector, an correction system includes a line cross position control device (209) which controls a line cross position in the aberration corrector of the charged particle beam so that a designed value and an actually measured value of the line cross position are equal to each other, an image shift amount extraction device (210), and a feedback determination device (211) which determines whether or not changing an excitation amount of the aberration corrector is necessary whether or not changing an excitation amount is necessary from an extracted image shift amount.

公开(公告)号：US20170018394A1

公开(公告)日：2017-01-19

申请号：US15123828

申请日：2015-02-04

Applicant: Hitachi High-Technologies Corporation

Inventor： Yasunari SOHDA ,  Takeyoshi OHASHI ,  Takafumi MIWA ,  Noritsugu TAKAHASHI ,  Hajime KAWANO

IPC: H01J37/05 ,  H01J37/29 ,  H01J37/145 ,  H01J37/26

CPC classification number: H01J37/05 ,  H01J37/145 ,  H01J37/21 ,  H01J37/263 ,  H01J37/28 ,  H01J37/292 ,  H01J2237/057 ,  H01J2237/1534 ,  H01J2237/24514

Abstract: A scanning electron microscope according to the present invention includes: an electron source that produces an electron beam; a trajectory dispersion unit that disperses the trajectory of an electron beam of electrons with a different energy value; a selection slit plate having a selection slit that selects the energy range of the dispersed electron beam; and a transmittance monitoring unit that monitors the transmittance of an electron beam, which is being transmitted through the selection slit. Accordingly, there can be provided a scanning electron microscope equipped with an energy filter that implements a stable reduction in energy distribution.

Abstract translation: 根据本发明的扫描电子显微镜包括：产生电子束的电子源; 轨迹分散单元，其分散具有不同能量值的电子束的轨迹; 选择狭缝板，其具有选择所述分散电子束的能量范围的选择狭缝; 以及透射率监视单元，其监视通过选择狭缝传输的电子束的透射率。 因此，可以提供一种装有能量过滤器的扫描电子显微镜，能够实现能量分布的稳定降低。

公开(公告)号：US20190244783A1

公开(公告)日：2019-08-08

申请号：US16261784

申请日：2019-01-30

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takeyoshi OHASHI ,  Masami IKOTA

IPC: H01J37/22 ,  H01J37/28 ,  G06T7/00

CPC classification number: H01J37/222 ,  G06T7/0004 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/28 ,  H01J2237/24564 ,  H01J2237/2801

Abstract: An inspection system is provided that includes a microscope that scans a sample with a beam that is an incident electron beam, and an image processing device that controls the microscope. The image processing device performs: an acquisition process of acquiring a plurality of images relating to brightness based on an amount of a signal electron detected from the sample a result of controlling the microscope according to a s and irradiating the sample with the beam, the plurality of image acquisition condition being multiple combinations of different irradiation amounts of the beam per unit length; a first generation process of generating a plurality of actually measured profiles that show a relationship between an irradiation position of the beam in the sample and the brightness of the sample, based on the plurality of images acquired in the acquisition process; and an output process of outputting an electrical contact characteristic of the sample based on the plurality of actually measured profiles generated in the first generation process.

公开(公告)号：US20150348747A1

公开(公告)日：2015-12-03

申请号：US14759782

申请日：2013-12-11

Applicant: Hitachi High-Technologies Corporation

Inventor： Takeyoshi OHASHI ,  Yasunari SOHDA ,  Noritsugu TAKAHASHI ,  Hajime KAWANO ,  Osamu KOMURO

IPC: H01J37/22 ,  H01J37/20 ,  H01J37/147 ,  H01J37/28

CPC classification number: H01J37/222 ,  H01J37/1472 ,  H01J37/1475 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/1536 ,  H01J2237/221 ,  H01J2237/2448 ,  H01J2237/2806 ,  H01J2237/2809 ,  H01J2237/2817

Abstract: This charged-particle beam device changes conditions for combining an intensity ratio between upper and lower deflectors and rotation angles of the deflectors in multiple ways when obtaining images having different pixel sizes in the vertical and horizontal directions. Then, the charged-particle beam device determines an optimal intensity ratio between the upper and lower deflectors and rotation angles of the deflectors on the basis of variations in size value measured in the larger pixel size direction (Y-direction) of the image. As a result, it is possible to extend the field of view in the Y-direction while reducing deflection aberrations when measuring at high precision in the X-direction.

Abstract translation: 当获得在垂直和水平方向上具有不同像素尺寸的图像时，该带电粒子束装置改变用于以多种方式组合上偏导器和下偏转器之间的强度比和偏转器的旋转角度的条件。 然后，带电粒子束装置基于在图像的较大像素尺寸方向（Y方向）上测量的尺寸值的变化，确定偏转器的上下偏转器之间的最佳强度比和偏转器的旋转角度。 结果，可以在X方向上以高精度测量的同时在Y方向上延伸视场，同时减少偏转像差。