公开(公告)号：US20210242030A1

公开(公告)日：2021-08-05

申请号：US16646057

申请日：2019-04-22

Applicant: Hitachi High-Technologies Corporation

Inventor： Kazunori SHINODA ,  Hiroto OTAKE ,  Hiroyuki KOBAYASHI ,  Kohei KAWAMURA ,  Masaru IZAWA

IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/02 ,  H01J37/32 ,  H01J37/18

Abstract: The present invention provides a plasma processing method or a plasma processing method, which allows the evenness of etching amounts to increase and the yield of processing to improve.
A method for etching a tungsten film includes: a first step of depositing a fluorocarbon layer and forming an intermediate layer that contains tungsten and fluorine and is self-limiting between the fluorocarbon layer and the tungsten film by supplying plasma of an organic gas containing fluorine to a base material having the tungsten film over at least a part of the surface; and a second step of removing the fluorocarbon layer and the intermediate layer by using plasma of an oxygen gas.