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公开(公告)号：US20190326101A1
公开(公告)日：2019-10-24
申请号：US16357971
申请日：2019-03-19
Applicant: Hitachi High-Technologies Corporation
Inventor： Kazuhiro UEDA , Kazuyuki IKENAGA , Tomoyuki TAMURA , Masahiro SUMIYA
Abstract: A plasma processing apparatus includes: a processing chamber disposed inside a vacuum container and in which plasma is formed; and a member which is a member forming an inner wall surface of the processing chamber and is disposed on a surface to be exposed to the plasma and has a coating film formed by spraying of yttrium fluoride or a material containing the yttrium fluoride. A ratio of an orthorhombic crystal of the yttrium fluoride or the material containing the yttrium fluoride forming the coating film relative to the entirety is 60% or more.
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