公开(公告)号：US20200066500A1

公开(公告)日：2020-02-27

申请号：US16666842

申请日：2019-10-29

Applicant: Hitachi High-Technologies Corporation

Inventor： Ryoji ASAKURA ,  Kenji TAMAKI ,  Akira KAGOSHIMA ,  Daisuke SHIRAISHI ,  Masahiro SUMIYA

IPC: H01J37/32

Abstract: In time-series data indicating light emission of plasma when plasma processing is carried out on a sample by generating the plasma, an analysis apparatus creates combinations of a plurality of light emission wavelengths of elements and a plurality of time intervals within a plasma processing interval and calculates, for each of the combinations of the wavelengths and the time intervals, a correlation between an average value of light emission intensity and the number of times the plasma processing is carried out on the samples for each of the combinations of the wavelengths and the time intervals that have been created. Thereafter, the data analysis apparatus selects, as a combination of the wavelength and the time interval used to observe or control the plasma processing, a combination of a wavelength of light emitting from a specific element and a specific time interval having a maximum correlation.

公开(公告)号：US20190333772A1

公开(公告)日：2019-10-31

申请号：US16506095

申请日：2019-07-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Masaki ISHIGURO ,  Masahiro SUMIYA ,  Shigeru SHIRAYONE ,  Kazuyuki IKENAGA ,  Tomoyuki TAMURA

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683

Abstract: A plasma processing apparatus includes a plasma processing chamber processing a sample using plasma, a radio frequency power supply supplying radio frequency power for generating the plasma, a sample stage including an electrode electrostatically chucking the sample, mounting the sample thereon, a DC power supply applying DC voltage to the electrode, and a control device shifting the DC voltage previously set, in a negative direction by a first shift amount during discharge of the plasma, shifting the DC voltage having been shifted in the negative direction by the first shift amount, in a positive direction by a second shift amount after the discharge of the plasma. The first shift amount has a value changing potential over a surface of the sample to 0 V, upon shifting the DC voltage in the positive direction. The second shift amount has a value obtained based on a floating potential of the plasma.

公开(公告)号：US20180040491A1

公开(公告)日：2018-02-08

申请号：US15425155

申请日：2017-02-06

Applicant: Hitachi High-Technologies Corporation

Inventor： Masaki ISHIGURO ,  Masahiro SUMIYA

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/683

Abstract: The invention provides a plasma processing apparatus which includes a processing chamber, a radio frequency power source to supply a radio frequency power for plasma generation, a sample stage equipped with an electrostatic chuck electrode of a sample, a DC power source to apply a DC voltage to the electrode, and a control unit to change the DC voltage from a predetermined value to almost 0 V when a predetermined time elapses since the supplying of the radio frequency power is stopped. The predetermined value is a predetermined value indicating that a potential of the sample when the DC voltage is almost 0 V becomes almost 0 V. The predetermined time is a time defined on the basis of a time when charged particles generated by the plasma processing disappear or a time when an afterglow discharge disappears.

公开(公告)号：US20160172161A1

公开(公告)日：2016-06-16

申请号：US14834404

申请日：2015-08-24

Applicant: Hitachi High-Technologies Corporation

Inventor： Kazuyuki IKENAGA ,  Masaki ISHIGURO ,  Masahiro SUMIYA ,  Shigeru SHIRAYONE

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32715 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32697 ,  H01J37/32706 ,  H01J37/32724

Abstract: Provided is a plasma processing apparatus capable of obtaining desired etch profiles and preventing the degradation of yield rates due to the adhesion of particles, and equipped with a processing chamber in which a sample is plasma-treated; a radio-frequency power source for supplying radio-frequency power used to generate plasma; a sample stage which is provided with electrodes for electrostatically adsorbing the sample and on which the sample is mounted; and a DC power supply for applying DC voltages to the electrodes, the apparatus being further equipped with a control apparatus for controlling the DC power supply so as to apply such DC voltages as to decrease the absolute value of the potential of the sample in the absence of the plasma.

Abstract translation: 本发明提供一种等离子体处理装置，其能够获得期望的蚀刻轮廓并防止由于颗粒的粘附导致的屈服率的降低，并且装备有其中样品被等离子体处理的处理室; 用于提供用于产生等离子体的射频电力的射频电源; 样品台，其设置有用于静电吸附样品的电极，并且其上安装有样品; 以及用于向电极施加直流电压的直流电源，该装置还配备有用于控制直流电源的控制装置，以便施加这样的直流电压，以在不存在的情况下降低样品的电位的绝对值 的等离子体。

公开(公告)号：US20180082855A1

公开(公告)日：2018-03-22

申请号：US15443578

申请日：2017-02-27

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Junya SASAKI ,  Masahiro SUMIYA

IPC: H01L21/3213 ,  H01L21/67

CPC classification number: H01L21/32136 ,  C23C16/4405 ,  C23C16/463 ,  C23C16/50 ,  H01J37/32862 ,  H01L21/02071 ,  H01L21/67023 ,  H01L21/67069

Abstract: The present invention provides a plasma processing method for subjecting a sample on which a metal element-containing film is disposed to plasma etching in a processing chamber. The method comprises: subjecting an inside of the processing chamber to plasma cleaning using a boron element-containing gas; removing the boron element using plasma after the plasma cleaning; subjecting the inside of the processing chamber to plasma cleaning using a fluorine element-containing gas after removing the boron element; depositing a deposited film in the processing chamber by plasma using a silicon element-containing gas after the plasma cleaning using the fluorine element-containing gas; and subjecting the sample to plasma etching after depositing the deposited film.

公开(公告)号：US20160379896A1

公开(公告)日：2016-12-29

申请号：US15050631

申请日：2016-02-23

Applicant: Hitachi High-Technologies Corporation

Inventor： Ryoji ASAKURA ,  Kenji TAMAKI ,  Akira KAGOSHIMA ,  Daisuke SHIRAISHI ,  Masahiro SUMIYA

IPC: H01L21/66

Abstract: In time-series data indicating light emission of plasma when plasma processing is carried out on a sample by generating the plasma, an analysis apparatus creates combinations of a plurality of light emission wavelengths of elements and a plurality of time intervals within a plasma processing interval and calculates, for each of the combinations of the wavelengths and the time intervals, a correlation between an average value of light emission intensity and the number of times the plasma processing is carried out on the samples for each of the combinations of the wavelengths and the time intervals that have been created. Thereafter, the data analysis apparatus selects, as a combination of the wavelength and the time interval used to observe or control the plasma processing, a combination of a wavelength of light emitting from a specific element and a specific time interval having a maximum correlation.

Abstract translation: 在通过产生等离子体对样品进行等离子体处理时的等离子体发光的时间序列数据中，分析装置在等离子体处理间隔内产生多个元件的发光波长和多个时间间隔的组合， 针对波长和时间间隔的每个组合计算发光强度的平均值和对波长的每个组合的样本对等离子体处理执行的次数与时间的相关性 已创建的间隔。 此后，数据分析装置选择用于观察或控制等离子体处理的波长和时间间隔的组合，从特定元素发射的光的波长与具有最大相关性的特定时间间隔的组合。

公开(公告)号：US20200064820A1

公开(公告)日：2020-02-27

申请号：US16533273

申请日：2019-08-06

Applicant: Hitachi High-Technologies Corporation

Inventor： Masaki ISHIGURO ,  Masahiro SUMIYA

IPC: G05B19/418

Abstract: Provided is a state prediction apparatus that predicts a state of the plasma processing apparatus, a first set of features that indicates the state of the plasma processing apparatus is determined based on monitored data of the plasma processing apparatus in a normal state, a second set of features that indicates the state of the plasma processing apparatus is determined based on monitored data of the plasma processing apparatus, the features in the second set are calculated by using the features in the first set, a model that predicts the state of the plasma processing apparatus is generated by using a subset of the first set of features, which is composed of the same kind of features selected in descending order of the calculated features in the second set, and the state of the plasma processing apparatus is predicted by using the generated model.

公开(公告)号：US20190237309A1

公开(公告)日：2019-08-01

申请号：US16123176

申请日：2018-09-06

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yoshito KAMAJI ,  Masahiro SUMIYA

IPC: H01J37/32 ,  G05B23/02 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01J37/32935 ,  G05B23/0283 ,  G06N20/00 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67253

Abstract: A plasma processing apparatus including a state prediction apparatus that predicts an apparatus state of the plasma processing apparatus configured to include an apparatus data recording unit that records apparatus data output from the plasma processing apparatus during the processing of the sample, a physical environment measurement data recording unit that measures physical environment in the processing chamber and records apparatus physical environment data, data correction unit that extracts a temporal change component of the physical environment from a plurality of the apparatus physical environment data recorded in the physical environment measurement data recording unit and extracts the temporal change component of the physical environment from the apparatus data to remove the temporal change components, and an apparatus state prediction calculation unit that predicts the state of the plasma processing apparatus using the apparatus data from which the temporal change component of the physical environment is removed as input data.

公开(公告)号：US20190088455A1

公开(公告)日：2019-03-21

申请号：US15904917

申请日：2018-02-26

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yoshito KAMAJI ,  Masahiro SUMIYA

IPC: H01J37/32 ,  H01J37/24 ,  G06N7/00 ,  G06F17/18

Abstract: A system that predicts an apparatus state of a plasma processing apparatus including a processing chamber in which a sample is processed is configured to have a data recording unit that records emission data of plasma during processing of the sample and electrical signal data obtained from the apparatus during the plasma processing, an arithmetic unit that includes a first calculation unit for calculating a first soundness index value of the plasma processing apparatus and a first threshold for an abnormality determination using a first algorithm with respect to the recorded emission data and a second calculation unit for calculating a second soundness index value of the plasma processing apparatus and a second threshold for the abnormality determination using a second algorithm with respect to the electrical signal data recorded in the data recording unit, and a determination unit that determines soundness of the plasma processing apparatus using the calculated first soundness index value and the first threshold and the calculated second soundness index value and the second threshold.

公开(公告)号：US20170194157A1

公开(公告)日：2017-07-06

申请号：US15248205

申请日：2016-08-26

Applicant: Hitachi High-Technologies Corporation

Inventor： Masaki ISHIGURO ,  Masahiro SUMIYA ,  Shigeru SHIRAYONE ,  Tomoyuki TAMURA ,  Kazuyuki IKENAGA

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/3065 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/32788 ,  H01L21/67069 ,  H01L21/6833

Abstract: A sample releasing method for releasing a sample subjected to plasma processing from a sample stage on which the sample is electrostatically attracted by applying DC voltage to an electrostatic chuck electrode, and the method includes: moving the sample subjected to the plasma processing upward above the sample stage; and after moving the sample, controlling the DC voltage such that an electric potential of the sample is to be smaller.