公开(公告)号：US20160138170A1

公开(公告)日：2016-05-19

申请号：US14770082

申请日：2014-11-19

Applicant: Hitachi High-Technologies Corporation

Inventor： Masato ISHIMARU ,  Takeshi SHIMADA ,  Makoto SUYAMA ,  Takahiro ABE

IPC: C23F1/02 ,  C23F1/12

CPC classification number: C23F1/02 ,  C23F1/12 ,  C23F4/00 ,  H01L43/12

Abstract: A plasma processing method is provided for reducing dimensions of a film to be etched from patterned dimensions, and is capable of reducing dimensions without causing deformation or collapse of the film to be etched.A plasma processing method for trimming a tantalum film by plasma etching using a resist, an antireflective film disposed under the resist, and a mask film disposed under the antireflective film, includes the steps of trimming the antireflective film and the mask film by plasma etching with the resist as a mask; removing the resist and the antireflective film subjected to the trimming, by plasma; and trimming the tantalum film by plasma etching with a mask film obtained after the resist and the antireflective film subjected to the trimming are removed by plasma, as a mask.

Abstract translation: 提供了一种等离子体处理方法，用于从图案化尺寸减小要蚀刻的膜的尺寸，并且能够减小尺寸，而不会导致待蚀刻的膜的变形或塌陷。 使用抗蚀剂的等离子体蚀刻来修整钽膜的等离子体处理方法，设置在抗蚀剂下方的防反射膜和设置在抗反射膜下的掩模膜的步骤包括以下步骤：通过等离子体蚀刻对抗反射膜和掩模膜进行修整 抗蚀剂作为掩模; 通过等离子体去除经过修整的抗蚀剂和抗反射膜; 作为掩模，通过用抗蚀剂和经过修整的抗反射膜之后获得的掩模膜通过等离子体蚀刻来修整钽膜作为掩模。