公开(公告)号：US20150020970A1

公开(公告)日：2015-01-22

申请号：US14508859

申请日：2014-10-07

Applicant: Hitachi High-Technologies Corporation

Inventor： Eiji IKEGAMI ,  Shoji IKUHARA ,  Takeshi SHIMADA ,  Kenichi KUWABARA ,  Takao ARASE ,  Tsuyoshi MATSUMOTO

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32963 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32192 ,  H01J37/32917 ,  H01J37/32926 ,  H01J37/32935 ,  H01J37/32981 ,  H01J37/3299 ,  H01J2237/1825 ,  H01J2237/327 ,  H01L21/67069 ,  H01L21/67242 ,  H05H1/46

Abstract: Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.

Abstract translation: 在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理，该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极，供给处理用气体供给装置 气体进入处理室，用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。 多个基板中的至少一个被放置在下电极上，并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极，以在处理室内产生等离子体，其中已经由螺线管线圈形成了磁场。 然后重复这种至少一个基板的放置和该处理气体的进料，直至完成所有多个基板的等离子体处理。 当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时，确定调味品的结束。

公开(公告)号：US20140116985A1

公开(公告)日：2014-05-01

申请号：US13748665

申请日：2013-01-24

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Makoto SATAKE ,  Jun HAYAKAWA ,  Tsutomu TETSUKA ,  Takeshi SHIMADA ,  Naohiro YAMAMOTO ,  Atsushi YOSHIDA

IPC: B44C1/22

CPC classification number: G01R33/093 ,  B82Y25/00 ,  G01R33/09 ,  G11B5/3116 ,  G11C11/161 ,  H01F41/307 ,  H01F41/308 ,  H01J37/32192 ,  H01J37/32229 ,  H01L21/3065 ,  H01L21/31138 ,  H01L43/12

Abstract: The present invention provides a method for manufacturing a magnetoresistive element having a high selection ratio of an insulating layer to a free layer. The method for manufacturing a magnetoresistive element includes the steps of preparing (left drawing, middle drawing) a substrate on which a free layer, a fixed layer disposed under a first magnetic layer, and a barrier layer that is an insulating layer disposed between the free layer and the fixed layer are formed and processing (right drawing) the free layer by plasma etching, in which an insulating layer configuring the barrier layer contains a Ta element or a Ti element.

Abstract translation: 本发明提供一种制造具有高绝缘层与自由层的选择比的磁阻元件的方法。 制造磁阻元件的方法包括以下步骤：准备（左图，中间图）其上设置有自由层的基板，设置在第一磁性层下的固定层，以及设置在自由层之间的绝缘层的阻挡层 层和固定层，并且通过等离子体蚀刻处理（右图）自由层，其中构成阻挡层的绝缘层包含Ta元素或Ti元素。

公开(公告)号：US20160138170A1

公开(公告)日：2016-05-19

申请号：US14770082

申请日：2014-11-19

Applicant: Hitachi High-Technologies Corporation

Inventor： Masato ISHIMARU ,  Takeshi SHIMADA ,  Makoto SUYAMA ,  Takahiro ABE

IPC: C23F1/02 ,  C23F1/12

CPC classification number: C23F1/02 ,  C23F1/12 ,  C23F4/00 ,  H01L43/12

Abstract: A plasma processing method is provided for reducing dimensions of a film to be etched from patterned dimensions, and is capable of reducing dimensions without causing deformation or collapse of the film to be etched.A plasma processing method for trimming a tantalum film by plasma etching using a resist, an antireflective film disposed under the resist, and a mask film disposed under the antireflective film, includes the steps of trimming the antireflective film and the mask film by plasma etching with the resist as a mask; removing the resist and the antireflective film subjected to the trimming, by plasma; and trimming the tantalum film by plasma etching with a mask film obtained after the resist and the antireflective film subjected to the trimming are removed by plasma, as a mask.

Abstract translation: 提供了一种等离子体处理方法，用于从图案化尺寸减小要蚀刻的膜的尺寸，并且能够减小尺寸，而不会导致待蚀刻的膜的变形或塌陷。 使用抗蚀剂的等离子体蚀刻来修整钽膜的等离子体处理方法，设置在抗蚀剂下方的防反射膜和设置在抗反射膜下的掩模膜的步骤包括以下步骤：通过等离子体蚀刻对抗反射膜和掩模膜进行修整 抗蚀剂作为掩模; 通过等离子体去除经过修整的抗蚀剂和抗反射膜; 作为掩模，通过用抗蚀剂和经过修整的抗反射膜之后获得的掩模膜通过等离子体蚀刻来修整钽膜作为掩模。