公开(公告)号：US20150099368A1

公开(公告)日：2015-04-09

申请号：US14447681

申请日：2014-07-31

Applicant: Hitachi High-Technologies Corporation

Inventor： Ze SHEN ,  Tetsuo ONO ,  Hisao YASUNAMI

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32192 ,  H01J37/32201 ,  H01L21/02532

Abstract: In a dry etching method for isotropically etching each of SiGe layers selectively relative to each of Si layers in a laminated film composed of the Si layers and SiGe layers alternately and repeatedly laminated, the each of the SiGe layers is plasma-etched with pulse-modulated plasma using NF3 gas.

Abstract translation: 在由Si层和SiGe层组成的层叠膜中，相对于Si层中的每一个Si层选择性地各向同性蚀刻每个SiGe层的干蚀刻方法中，每个SiGe层被等离子体蚀刻 使用NF3气体的等离子体。