公开(公告)号：US20240355888A1

公开(公告)日：2024-10-24

申请号：US18683523

申请日：2022-11-11

申请人： Hitachi Power Semiconductor Device, Ltd.

发明人： Masaki SHIRAISHI ,  Daisuke KAWASE ,  Tetsuo ODA ,  Tomoyasu FURUKAWA ,  Yutaka KATO ,  Tsubasa MORITSUKA

IPC分类号： H01L29/40 ,  H01L29/06 ,  H02M7/5387

CPC分类号： H01L29/402 ,  H01L29/0623 ,  H02M7/5387

摘要： The present invention provides: a semiconductor device which has higher resistance to bias at high temperatures and high humidities than ever before, while achieving good connection between a field limiting layer and a field plate; and a power conversion device which uses this semiconductor device. A semiconductor device according to the present invention is characterized by comprising a floating field limiting layer that is provided in a termination region and a field plate that is electrically connected to the field limiting layer, and is also characterized in that: the field plate is formed of a polysilicon; the field plate and the field limiting layer are connected to each other via an Al electrode; and the connection between the field limiting layer and the Al electrode and the connection between the field plate and the Al electrode are established at different contacts.