公开(公告)号：US07612454B2

公开(公告)日：2009-11-03

申请号：US12172937

申请日：2008-07-14

申请人： Honglin Guo ,  Dongmei Lei ,  Brian Goodlin ,  Joe McPherson

发明人： Honglin Guo ,  Dongmei Lei ,  Brian Goodlin ,  Joe McPherson

IPC分类号： H01L23/52 ,  H01L21/44

CPC分类号： H01L23/5256 ,  H01L23/3677 ,  H01L27/0617 ,  H01L2924/0002 ,  H01L2924/00

摘要： One aspect of the invention provides an integrated circuit(IC) [400b]. The IC comprises transistors [410b] and contact fuses [422b]. The contact fuses each comprise a conducting layer [424b], a frustum-shaped contact [426b] has a narrower end that contacts the conducting layer and a first metal layer [427b] that is located over the conducting layer. A wider end of the frustum-shaped contact contacts the first metal layer. The frustum-shaped contact has a ratio of an opening of the wider end to the narrower end that is at least about 1.2. The contact fuses each further include a heat sink [432b] that is located over and contacts the first metal layer.

摘要翻译： 本发明的一个方面提供一种集成电路（IC）[400b]。 IC包括晶体管[410b]和接触式保险丝[422b]。 接触熔断器各自包括导电层[424b]，截头锥形接触件[426b]具有接触导电层的较窄端部和位于导电层上方的第一金属层[427b]。 截头锥形接触件的较宽端接触第一金属层。 截头锥形接触件具有较大端部与较窄端部的开口的比率为至少约1.2。 接触熔断器还包括位于第一金属层之上并接触第一金属层的散热器[432b]。

公开(公告)号：US07413980B2

公开(公告)日：2008-08-19

申请号：US11380120

申请日：2006-04-25

申请人： Honglin Guo ,  Dongmei Lei ,  Brian Goodlin ,  Joe McPherson

发明人： Honglin Guo ,  Dongmei Lei ,  Brian Goodlin ,  Joe McPherson

IPC分类号： H01L21/44

CPC分类号： H01L23/5256 ,  H01L23/3677 ,  H01L27/0617 ,  H01L2924/0002 ,  H01L2924/00

摘要： One aspect of the invention provides an integrated circuit (IC). The IC comprises transistors and contact fuses. The contact fuses each comprise a conducting layer, a frustum-shaped contact has a narrower end that contacts the conducting layer and a first metal layer that is located over the conducting layer. A wider end of the frustum-shaped contact contacts the first metal layer. The frustum-shaped contact has a ratio of an opening of the wider end to the narrower end that is at least about 1.2. The contact fuses each further include a heat sink that is located over and contacts the first metal layer.

摘要翻译： 本发明的一个方面提供一种集成电路（IC）。 IC包括晶体管和接触式保险丝。 接触熔丝各自包括导电层，截头锥形接触件具有接触导电层的较窄端部和位于导电层上方的第一金属层。 截头锥形接触件的较宽端接触第一金属层。 截头锥形接触件具有较大端部与较窄端部的开口的比率为至少约1.2。 每个接触保险丝还包括位于第一金属层之上并接触第一金属层的散热器。

公开(公告)号：US20080265366A1

公开(公告)日：2008-10-30

申请号：US12172937

申请日：2008-07-14

申请人： Honglin Guo ,  Dongmei Lei ,  Brian Goodlin ,  Joe McPherson

发明人： Honglin Guo ,  Dongmei Lei ,  Brian Goodlin ,  Joe McPherson

IPC分类号： H01L23/525

CPC分类号： H01L23/5256 ,  H01L23/3677 ,  H01L27/0617 ,  H01L2924/0002 ,  H01L2924/00

摘要： One aspect of the invention provides an integrated circuit(IC) [400b]. The IC comprises transistors [410b] and contact fuses [422b]. The contact fuses each comprise a conducting layer [424b], a frustum-shaped contact [426b] has a narrower end that contacts the conducting layer and a first metal layer [427b] that is located over the conducting layer. A wider end of the frustum-shaped contact contacts the first metal layer. The frustum-shaped contact has a ratio of an opening of the wider end to the narrower end that is at least about 1.2. The contact fuses each further include a heat sink [432b] that is located over and contacts the first metal layer.

摘要翻译： 本发明的一个方面提供一种集成电路（IC）[400b]。 IC包括晶体管[410b]和接触式保险丝[422b]。 接触熔断器各自包括导电层[424b]，截头锥形接触件[426b]具有接触导电层的较窄端部和位于导电层上方的第一金属层[427b]。 截头锥形接触件的较宽端接触第一金属层。 截头锥形接触件具有较大端部与较窄端部的开口的比率为至少约1.2。 接触熔断器还包括位于第一金属层之上并接触第一金属层的散热器[432b]。

公开(公告)号：US20070246796A1

公开(公告)日：2007-10-25

申请号：US11380120

申请日：2006-04-25

申请人： Honglin Guo ,  Dongmei Li ,  Brian Goodlin ,  Joe McPherson

发明人： Honglin Guo ,  Dongmei Li ,  Brian Goodlin ,  Joe McPherson

IPC分类号： H01L29/00

CPC分类号： H01L23/5256 ,  H01L23/3677 ,  H01L27/0617 ,  H01L2924/0002 ,  H01L2924/00

摘要： One aspect of the invention provides an integrated circuit (IC). The IC comprises transistors and contact fuses. The contact fuses each comprise a conducting layer, a frustum-shaped contact has a narrower end that contacts the conducting layer and a first metal layer that is located over the conducting layer. A wider end of the frustum-shaped contact contacts the first metal layer. The frustum-shaped contact has a ratio of an opening of the wider end to the narrower end that is at least about 1.2. The contact fuses each further include a heat sink that is located over and contacts the first metal layer.

摘要翻译： 本发明的一个方面提供一种集成电路（IC）。 IC包括晶体管和接触式保险丝。 接触熔丝各自包括导电层，截头锥形接触件具有接触导电层的较窄端部和位于导电层上方的第一金属层。 截头锥形接触件的较宽端接触第一金属层。 截头锥形接触件具有较大端部与较窄端部的开口的比率为至少约1.2。 每个接触保险丝还包括位于第一金属层之上并接触第一金属层的散热器。

公开(公告)号：US20050159004A1

公开(公告)日：2005-07-21

申请号：US10760801

申请日：2004-01-20

申请人： Honglin Guo ,  Joe McPherson

发明人： Honglin Guo ,  Joe McPherson

IPC分类号： H01L21/302 ,  H01L21/44 ,  H01L21/461 ,  H01L21/768

CPC分类号： H01L21/76877

摘要： The present invention defines a system for impeding corrosive egress from a metallic trench structure (206) during the production of a semiconductor device segment (200). The system of the present invention provides a first non-metallic structure (212) and a second non-metallic structure (214). The metallic trench structure is interposed between the first and second non-metallic structures. The device segment is cleaned, after which an upper exposed surface (220) of the metallic structure is recessed (226) from an upper exposed surface (216) of the first or second non-metallic structure by a desired amount.

摘要翻译： 本发明限定了在制造半导体器件段（200）期间阻止来自金属沟槽结构（206）的腐蚀性出口的系统。 本发明的系统提供第一非金属结构（212）和第二非金属结构（214）。 金属沟槽结构介于第一和第二非金属结构之间。 清洁装置段，此后金属结构的上暴露表面（220）从第一或第二非金属结构的上暴露表面（216）凹入（226）所需的量。

公开(公告)号：US20070023859A1

公开(公告)日：2007-02-01

申请号：US11192825

申请日：2005-07-29

申请人： Robert Pitts ,  Bryan Sheffield ,  Roger Griesmer ,  Joe McPherson

发明人： Robert Pitts ,  Bryan Sheffield ,  Roger Griesmer ,  Joe McPherson

IPC分类号： H01L29/00

CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a semiconductor device fuse, comprising a metal layer and a first semiconductor layer that electrically couples the metal layer to a fuse layer, wherein the fuse layer is spaced apart from the metal layer. The semiconductor device fuse further comprises a second semiconductor layer that forms a blow junction interface with the fuse layer. The blow junction interface is configured to form an open circuit when a predefined power is transmitted through the second semiconductor layer to the fuse layer.

摘要翻译： 本发明提供了一种半导体器件熔丝，其包括金属层和将金属层电耦合到熔丝层的第一半导体层，其中熔丝层与金属层间隔开。 半导体器件熔丝进一步包括形成与熔丝层的熔结接口的第二半导体层。 当预定义的功率通过第二半导体层透射到熔丝层时，该熔接结界面被配置为形成开路。

公开(公告)号：US08093716B2

公开(公告)日：2012-01-10

申请号：US11192825

申请日：2005-07-29

申请人： Robert L. Pitts ,  Bryan Sheffield ,  Roger Griesmer ,  Joe McPherson

发明人： Robert L. Pitts ,  Bryan Sheffield ,  Roger Griesmer ,  Joe McPherson

IPC分类号： H01L23/34

CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a semiconductor device fuse, comprising a metal layer and a first semiconductor layer that electrically couples the metal layer to a fuse layer, wherein the fuse layer is spaced apart from the metal layer. The semiconductor device fuse further comprises a second semiconductor layer that forms a blow junction interface with the fuse layer. The blow junction interface is configured to form an open circuit when a predefined power is transmitted through the second semiconductor layer to the fuse layer.

摘要翻译： 本发明提供了一种半导体器件熔丝，其包括金属层和将金属层电耦合到熔丝层的第一半导体层，其中熔丝层与金属层间隔开。 半导体器件熔丝进一步包括形成与熔丝层的熔结接口的第二半导体层。 当预定义的功率通过第二半导体层透射到熔丝层时，该熔接结界面被配置为形成开路。