Thin film transistor susbtrate including oxide semiconductor
    1.
    发明授权
    Thin film transistor susbtrate including oxide semiconductor 有权
    薄膜晶体管包括氧化物半导体

    公开(公告)号:US08803144B2

    公开(公告)日:2014-08-12

    申请号:US13333720

    申请日:2011-12-21

    摘要: The present disclosure relates to a thin film transistor substrate for flat panel display device including oxide semiconductor. The present disclosure suggests a thin film transistor substrate for flat panel display device comprising: a transparent substrate; a thin film transistor layer having an oxide semiconductor material disposed on the transparent substrate; a passivation layer disposed on the whole surface of the thin film transistor layer; a pixel electrode formed on the passivation layer and contact the thin film transistor layer through a contact hole formed at the passivation layer; and a first ultra violet light absorbing layer disposed on the whole surface of the pixel electrode. Absorbing all of ultra violet light and passing all of the visible light, the photo-thermal characteristic is enhanced and the transparency property is not degraded.

    摘要翻译: 本公开涉及一种用于包括氧化物半导体的平板显示装置的薄膜晶体管基板。 本公开提出了一种用于平板显示装置的薄膜晶体管基板,包括:透明基板; 具有设置在所述透明基板上的氧化物半导体材料的薄膜晶体管层; 设置在所述薄膜晶体管层的整个表面上的钝化层; 形成在所述钝化层上并通过形成在所述钝化层处的接触孔与所述薄膜晶体管层接触的像素电极; 以及设置在像素电极的整个表面上的第一紫外光吸收层。 吸收所有的紫外光并通过所有可见光,光热特性得到提高,透明性不会降低。

    THIN FILM TRANSISTOR SUSBTRATE INCLUDING OXIDE SEMICONDUCTOR
    2.
    发明申请
    THIN FILM TRANSISTOR SUSBTRATE INCLUDING OXIDE SEMICONDUCTOR 有权
    薄膜晶体管,包括氧化物半导体

    公开(公告)号:US20120168746A1

    公开(公告)日:2012-07-05

    申请号:US13333720

    申请日:2011-12-21

    IPC分类号: H01L29/786

    摘要: The present disclosure relates to a thin film transistor substrate for flat panel display device including oxide semiconductor. The present disclosure suggests a thin film transistor substrate for flat panel display device comprising: a transparent substrate; a thin film transistor layer having an oxide semiconductor material disposed on the transparent substrate; a passivation layer disposed on the whole surface of the thin film transistor layer; a pixel electrode formed on the passivation layer and contact the thin film transistor layer through a contact hole formed at the passivation layer; and a first ultra violet light absorbing layer disposed on the whole surface of the pixel electrode. Absorbing all of ultra violet light and passing all of the visible light, the photo-thermal characteristic is enhanced and the transparency property is not degraded.

    摘要翻译: 本公开涉及一种用于包括氧化物半导体的平板显示装置的薄膜晶体管基板。 本公开提出了一种用于平板显示装置的薄膜晶体管基板,包括:透明基板; 具有设置在所述透明基板上的氧化物半导体材料的薄膜晶体管层; 设置在所述薄膜晶体管层的整个表面上的钝化层; 形成在所述钝化层上并通过形成在所述钝化层处的接触孔与所述薄膜晶体管层接触的像素电极; 以及设置在像素电极的整个表面上的第一紫外光吸收层。 吸收所有的紫外光并通过所有可见光,光热特性得到提高,透明性不会降低。