公开(公告)号：US08330683B2

公开(公告)日：2012-12-11

申请号：US10962502

申请日：2004-10-13

申请人： Hoon-Ju Chung ,  Chang-Hoon Jeon

发明人： Hoon-Ju Chung ,  Chang-Hoon Jeon

IPC分类号： G09G3/32

CPC分类号： G09G3/3233 ,  G09G3/2022 ,  G09G3/2029 ,  G09G3/3291 ,  G09G2300/0842

摘要： A driving method of a flat panel display includes dividing one frame into a plurality of sub-frames, wherein each sub-frame includes an on-state time, each on-state time corresponds to a weight value, and at least one of the weight values is expressed in the form of a non-binary code; applying an on-state gate signal to a pixel in each sub-frame to turn on the pixel; and applying each bit of a data signal corresponding to each sub-frame to the pixel.

摘要翻译： 平板显示器的驱动方法包括将一帧划分成多个子帧，其中每个子帧包括接通状态时间，每个接通状态时间对应于权重值，并且至少一个权重 值以非二进制代码的形式表示; 对每个子帧中的像素施加导通状态栅极信号以使像素导通; 以及将与每个子帧相对应的数据信号的每一位应用于像素。

公开(公告)号：US20050212729A1

公开(公告)日：2005-09-29

申请号：US10962502

申请日：2004-10-13

申请人： Hoon-Ju Chung ,  Chang-Hoon Jeon

发明人： Hoon-Ju Chung ,  Chang-Hoon Jeon

IPC分类号： H01L51/50 ,  G09G3/20 ,  G09G3/30 ,  H05B33/00 ,  H05B33/14

CPC分类号： G09G3/3233 ,  G09G3/2022 ,  G09G3/2029 ,  G09G3/3291 ,  G09G2300/0842

摘要： A driving method of a flat panel display includes dividing one frame into a plurality of sub-frames, wherein each sub-frame includes an on-state time, each on-state time corresponds to a weight value, and at least one of the weight values is expressed in the form of a non-binary code; applying an on-state gate signal to a pixel in each sub-frame to turn on the pixel; and applying each bit of a data signal corresponding to each sub-frame to the pixel.

摘要翻译： 平板显示器的驱动方法包括将一帧划分成多个子帧，其中每个子帧包括接通状态时间，每个接通状态时间对应于权重值，并且至少一个权重 值以非二进制代码的形式表示; 对每个子帧中的像素施加导通状态栅极信号以使像素导通; 以及将与每个子帧相对应的数据信号的每一位应用于像素。

公开(公告)号：US07508037B2

公开(公告)日：2009-03-24

申请号：US11508948

申请日：2006-08-24

申请人： San-Ho Kim ,  Hoon-Ju Chung

发明人： San-Ho Kim ,  Hoon-Ju Chung

IPC分类号： H01L27/00

CPC分类号： G02F1/136213 ,  G02F2001/136231

摘要： A method for fabricating a poly-silicon liquid crystal display device includes forming a poly-silicon layer including a TFT region and a storage capacitor region on a substrate, wherein the capacitor region includes an impurity injection region having a N-type impurity injection region and a P-type impurity injection region; forming a gate electrode and a storage capacitor electrode on the poly-silicon layer; injecting an N-type impurity ion with a high doping density into the N-type impurity injection region and the TFT region; injecting a P-type impurity ion with a high doping density into the P-type impurity injection region; forming an insulating layer on the gate electrode and the storage electrode; and forming a pixel electrode on the insulating layer, wherein the pixel electrode is electrically connected to the impurity injection region in the storage capacitor region. Because the number of masks used for forming the storage capacitor is reduced, the fabricating process of a poly-silicon liquid crystal display device can be simplified.

摘要翻译： 一种多晶硅液晶显示装置的制造方法，其特征在于，在基板上形成包括TFT区域和辅助电容器区域的多晶硅层，其中，所述电容器区域包括具有N型杂质注入区域的杂质注入区域， P型杂质注入区域; 在所述多晶硅层上形成栅电极和辅助电容电极; 向N型杂质注入区域和TFT区域注入具有高掺杂密度的N型杂质离子; 向P型杂质注入区注入高掺杂浓度的P型杂质离子; 在栅电极和存储电极上形成绝缘层; 以及在绝缘层上形成像素电极，其中像素电极与存储电容器区域中的杂质注入区电连接。 因为用于形成存储电容器的掩模的数量减少，所以可以简化多晶硅液晶显示装置的制造工艺。

公开(公告)号：US20060030089A1

公开(公告)日：2006-02-09

申请号：US11247202

申请日：2005-10-12

申请人： Hoon-Ju Chung

发明人： Hoon-Ju Chung

IPC分类号： H01L21/84

CPC分类号： H01L29/78696 ,  H01L29/66772 ,  H01L29/78621 ,  H01L29/78645

摘要： A thin film transistor device includes a substrate, a buffer layer on the substrate, an active layer on the buffer layer, the active layer is formed of polycrystalline silicon and includes first undoped areas, a second lightly doped area, and third highly doped areas, a gate insulation layer on the buffer layer, a dual-gate electrode on the gate insulation layer including first and second gate electrodes corresponding to the first areas, an interlayer insulator on the gate insulation layer covering the dual-gate electrode, source and drain contact holes exposing the third areas, a gate contact hole penetrating the interlayer insulator to expose a portion of the dual-gate electrode, source and drain electrodes on the interlayer insulator contacting the third areas through the source and drain contact holes, and a third gate electrode on the interlayer insulator contacting the exposed portion of the dual-gate electrode through the gate contact hole.

公开(公告)号：US06747625B1

公开(公告)日：2004-06-08

申请号：US09628040

申请日：2000-07-27

申请人： Chul-Hi Han ,  Hoon-Ju Chung ,  Seung-Woo Lee

发明人： Chul-Hi Han ,  Hoon-Ju Chung ,  Seung-Woo Lee

IPC分类号： G09G336

CPC分类号： G09G3/3688 ,  G09G2310/027

摘要： A digital driving circuit for a liquid crystal display which sequentially receives and displays n-bit digital video information from a data bus on a bit basis. The digital driving circuit comprises a first data latch for sequentially storing the digital video information from the data bus on a bit basis, a shift register for synchronizing a latching operation of the first data latch with bit positions of the digital video information from the data bus, a second data latch for storing the digital video information stored in the first data latch temporarily before digital/analog conversion, and a digital/analog converter for sequentially converting the digital video information stored in the second data latch into analog signals on a bit basis. The digital driving circuit is able to sequentially process bit information of digital video information to reduce the number of data bus lines for loading the bit information thereon and the number of data catches arranged vertically to a column direction. Therefore, the driving circuit can be significantly reduced in its occupying width, thereby making it possible to make the display higher in density.

摘要翻译： 一种用于液晶显示器的数字驱动电路，其依次从数据总线接收并显示n位数字视频信息。 数字驱动电路包括第一数据锁存器，用于以数据总线顺序地存储来自数据总线的数字视频信息;移位寄存器，用于使第一数据锁存器的锁存操作与来自数据总线的数字视频信息的位位置同步 ，用于在数字/模拟转换之前临时存储存储在第一数据锁存器中的数字视频信息的第二数据锁存器，以及用于将存储在第二数据锁存器中的数字视频信息顺序地转换成模拟信号的数/模转换器 。 数字驱动电路能够顺序地处理数字视频信息的位信息，以减少用于加载其中的位信息的数据总线的数量和垂直于列方向布置的数据捕获的数量。 因此，驱动电路的占据宽度可以显着降低，从而可以使显示器的密度更高。

公开(公告)号：US20050243586A1

公开(公告)日：2005-11-03

申请号：US11107312

申请日：2005-04-15

申请人： Hoon-Ju Chung ,  Jae-Ho Sim

发明人： Hoon-Ju Chung ,  Jae-Ho Sim

IPC分类号： G09G3/30 ,  G11C15/00

CPC分类号： G09G3/2022 ,  G09G3/3233 ,  G09G2310/0216 ,  G09G2310/061

摘要： An organic electroluminescent display device includes a scan line, a data line, a voltage supply line, a switching transistor connected to the scan and data lines, a driving transistor connected to the switching transistor and the voltage supply line, a storage capacitor connected between the switching transistor and the voltage supply line, and an organic light-emitting diode connected to the driving transistor and ground. A black display voltage applied to the data line is supplied to the driving transistor when a first gate ON signal is applied to the scan line. A video data voltage applied to the data line is supplied to the driving transistor when a second gate ON signal is applied to the scan line. The voltages are applied at least once each frame.

摘要翻译： 一种有机电致发光显示装置，包括扫描线，数据线，电压供给线，连接到扫描和数据线的开关晶体管，连接到开关晶体管和电压源线的驱动晶体管， 开关晶体管和电源线，以及连接到驱动晶体管和接地的有机发光二极管。 当向扫描线施加第一栅极导通信号时，施加到数据线的黑色显示电压被提供给驱动晶体管。 当向扫描线施加第二栅极导通信号时，施加到数据线的视频数据电压被提供给驱动晶体管。 电压至少每帧施加一次。

公开(公告)号：US20050212447A1

公开(公告)日：2005-09-29

申请号：US11086674

申请日：2005-03-23

申请人： Du-Hwan Oh ,  Hoon-Ju Chung ,  Byeong-Koo Kim ,  Yong-Min Ha

发明人： Du-Hwan Oh ,  Hoon-Ju Chung ,  Byeong-Koo Kim ,  Yong-Min Ha

IPC分类号： H05B33/22 ,  G09G3/10 ,  H01L27/32 ,  H01L51/52

CPC分类号： H01L27/3246 ,  H01L27/3272 ,  H01L27/3283 ,  H01L51/5284

摘要： An organic electroluminescent display device includes: a substrate having a pixel region and a non-pixel region surrounding the pixel region; a first electrode on the substrate in the pixel region; an organic luminescent layer on the first electrode; a second electrode on the organic luminescent layer; and a light-shielding means corresponding to the non-pixel region.

摘要翻译： 有机电致发光显示装置包括：具有像素区域和围绕像素区域的非像素区域的基板; 在像素区域中的衬底上的第一电极; 在第一电极上的有机发光层; 有机发光层上的第二电极; 以及对应于非像素区域的遮光装置。

公开(公告)号：US20050094042A1

公开(公告)日：2005-05-05

申请号：US10876629

申请日：2004-06-28

申请人： San-Ho Kim ,  Hoon-Ju Chung

发明人： San-Ho Kim ,  Hoon-Ju Chung

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/135

CPC分类号： G02F1/136213 ,  G02F2001/136231

摘要： A method for fabricating a poly-silicon liquid crystal display device includes forming a poly-silicon layer including a TFT region and a storage capacitor region on a substrate, wherein the capacitor region includes an impurity injection region having a N-type impurity injection region and a P-type impurity injection region; forming a gate electrode and a storage capacitor electrode on the poly-silicon layer; injecting an N-type impurity ion with a high doping density into the N-type impurity injection region and the TFT region; injecting a P-type impurity ion with a high doping density into the P-type impurity injection region; forming an insulating layer on the gate electrode and the storage electrode; and forming a pixel electrode on the insulating layer, wherein the pixel electrode is electrically connected to the impurity injection region in the storage capacitor region. Because the number of masks used for forming the storage capacitor is reduced, the fabricating process of a poly-silicon liquid crystal display device can be simplified.

摘要翻译： 一种多晶硅液晶显示装置的制造方法，其特征在于，在基板上形成包括TFT区域和辅助电容器区域的多晶硅层，其中，所述电容器区域包括具有N型杂质注入区域的杂质注入区域， P型杂质注入区域; 在所述多晶硅层上形成栅电极和辅助电容电极; 向N型杂质注入区域和TFT区域注入具有高掺杂密度的N型杂质离子; 向P型杂质注入区注入高掺杂浓度的P型杂质离子; 在栅电极和存储电极上形成绝缘层; 以及在绝缘层上形成像素电极，其中像素电极与存储电容器区域中的杂质注入区电连接。 因为用于形成存储电容器的掩模的数量减少，所以可以简化多晶硅液晶显示装置的制造工艺。

公开(公告)号：US07319446B2

公开(公告)日：2008-01-15

申请号：US11108767

申请日：2005-04-19

申请人： Du-Hwan Oh ,  Hoon-Ju Chung

发明人： Du-Hwan Oh ,  Hoon-Ju Chung

IPC分类号： G09G3/30 ,  G09G3/32

CPC分类号： G09G3/3233 ,  G09G3/3291 ,  G09G2310/0251 ,  G09G2310/061 ,  G09G2320/0257

摘要： An organic electroluminescent display device includes a gate line receiving a gate signal, a data line crossing the gate line, the data line receiving a data signal, a switching thin film transistor switching the data signal according to the gate signal, a driving thin film transistor connected to the switching thin film transistor and receiving the data signal, a power line supplying a current to the driving thin film transistor, an organic electroluminescent diode connected to the driving thin film transistor, and a pre-charge element inputting a pre-charge voltage to the data line before the data line receives the data signal.

摘要翻译： 一种有机电致发光显示装置，包括接收栅极信号的栅极线，与栅极线交叉的数据线，接收数据信号的数据线，根据栅极信号切换数据信号的开关薄膜晶体管，驱动薄膜晶体管 连接到开关薄膜晶体管并接收数据信号，向驱动薄膜晶体管提供电流的电力线，连接到驱动薄膜晶体管的有机电致发光二极管和预充电元件输入预充电电压 在数据线接收到数据信号之前的数据线。

公开(公告)号：US07118944B2

公开(公告)日：2006-10-10

申请号：US11247202

申请日：2005-10-12

申请人： Hoon-Ju Chung

发明人： Hoon-Ju Chung

IPC分类号： H01L21/00 ,  H01L21/44

CPC分类号： H01L29/78696 ,  H01L29/66772 ,  H01L29/78621 ,  H01L29/78645

摘要： A thin film transistor device includes a substrate, a buffer layer on the substrate, an active layer on the buffer layer, the active layer is formed of polycrystalline silicon and includes first undoped areas, a second lightly doped area, and third highly doped areas, a gate insulation layer on the buffer layer, a dual-gate electrode on the gate insulation layer including first and second gate electrodes corresponding to the first areas, an interlayer insulator on the gate insulation layer covering the dual-gate electrode, source and drain contact holes exposing the third areas, a gate contact hole penetrating the interlayer insulator to expose a portion of the dual-gate electrode, source and drain electrodes on the interlayer insulator contacting the third areas through the source and drain contact holes, and a third gate electrode on the interlayer insulator contacting the exposed portion of the dual-gate electrode through the gate contact hole.

摘要翻译： 薄膜晶体管器件包括衬底，衬底上的缓冲层，缓冲层上的有源层，有源层由多晶硅形成，并且包括第一未掺杂区域，第二轻掺杂区域和第三高掺杂区域， 在所述缓冲层上的栅绝缘层，所述栅极绝缘层上的双栅电极，包括对应于所述第一区的第一和第二栅电极，所述栅极绝缘层上的覆盖所述双栅电极的层间绝缘体，源漏漏触点 暴露第三区域的孔，穿过层间绝缘体的栅极接触孔，以暴露双栅电极的一部分，通过源极和漏极接触孔与第三区域接触的层间绝缘体上的源极和漏极，以及第三栅电极 在层间绝缘体上通过栅极接触孔接触双栅电极的暴露部分。