公开(公告)号：US5370923A

公开(公告)日：1994-12-06

申请号：US23078

申请日：1993-02-26

申请人： Howard S. Goad ,  Derick J. Wristers ,  James H. Hussey, Jr. ,  Michael A. Hillis ,  William C. Chapman

发明人： Howard S. Goad ,  Derick J. Wristers ,  James H. Hussey, Jr. ,  Michael A. Hillis ,  William C. Chapman

IPC分类号： G03F7/20 ,  H01L21/66 ,  H01L23/544 ,  B32B9/00

CPC分类号： G03F7/70658 ,  H01L22/34 ,  H01L22/12 ,  Y10S428/901 ,  Y10T428/24802 ,  Y10T428/24917 ,  Y10T428/24926

摘要： A photolithography test structure is provided for measuring the amount of notching associated with photolithography processing. The test structure includes a curved insulating structure placed in close spaced proximity with a conductive, interconnect structure. A pair of conductive pads are deposited at opposite ends of the interconnect structure for measuring the resistance through the interconnect. Depending upon the amount of notching associated with the interconnect, resistance readings will vary. Test areas containing notched interconnect can be compared with controlled areas specifically designed not to have notching in order to determine relative changes in resistance, and to correlate that resistance with notching magnitude. The insulating structure, interconnect structure and conductive pads are processed upon the same substrate material containing the resulting product requiring testing.

摘要翻译： 提供光刻测试结构用于测量与光刻处理相关的开槽量。 测试结构包括一个弯曲的绝缘结构，它与导电互连结构紧密隔开。 一对导电焊盘沉积在互连结构的相对端，用于通过互连测量电阻。 根据与互连相关的开槽量，电阻读数会有所不同。 可以将包含切口互连的测试区域与专门设计为不具有开槽的控制区域进行比较，以确定电阻的相对变化，并将该电阻与开槽幅度相关联。 绝缘结构，互连结构和导电焊盘在包含所需产品需要测试的相同基板材料上进行加工。

公开(公告)号：US5472774A

公开(公告)日：1995-12-05

申请号：US292873

申请日：1994-08-19

申请人： Howard S. Goad ,  Derick J. Wristers ,  James H. Hussey, Jr. ,  Michael A. Hillis ,  William C. Chapman

发明人： Howard S. Goad ,  Derick J. Wristers ,  James H. Hussey, Jr. ,  Michael A. Hillis ,  William C. Chapman

IPC分类号： G03F7/20 ,  H01L21/66 ,  H01L23/544 ,  B32B9/00

CPC分类号： G03F7/70658 ,  H01L22/34 ,  H01L22/12 ,  Y10S428/901 ,  Y10T428/24802 ,  Y10T428/24917 ,  Y10T428/24926

摘要： A photolithography test structure is provided for measuring the amount of notching associated with photolithography processing. The test structure includes a curved insulating structure placed in close spaced proximity with a conductive, interconnect structure. A pair of conductive pads are deposited at opposite ends of the interconnect structure for measuring the resistance through the interconnect. Depending upon the amount of notching associated with the interconnect, resistance readings will vary. Test areas containing notched interconnect can be compared with controlled areas specifically designed not to have notching in order to determine relative changes in resistance, and to correlate that resistance with notching magnitude. The insulating structure, interconnect structure and conductive pads are processed upon the same substrate material containing the resulting product requiring testing.

摘要翻译： 提供光刻测试结构用于测量与光刻处理相关的开槽量。 测试结构包括一个弯曲的绝缘结构，它与导电互连结构紧密隔开。 一对导电焊盘沉积在互连结构的相对端，用于通过互连测量电阻。 根据与互连相关的开槽量，电阻读数会有所不同。 可以将包含切口互连的测试区域与专门设计为不具有开槽的控制区域进行比较，以确定电阻的相对变化，并将该电阻与开槽幅度相关联。 绝缘结构，互连结构和导电焊盘在包含所需产品需要测试的相同基板材料上进行加工。