TRANSESTERIFICATION PROCESS OF METHYL ACETATE
    1.
    发明申请
    TRANSESTERIFICATION PROCESS OF METHYL ACETATE 有权
    乙酸甲酯的转化过程

    公开(公告)号:US20080161595A1

    公开(公告)日:2008-07-03

    申请号:US11715776

    申请日:2007-03-08

    IPC分类号: C07C67/02

    摘要: A transesterification process of methyl acetate is provided. The process comprises: (a) performing a first reactive distillation of a methyl acetate solution and a first alcohol to generate a first ester and a first mixture; (b) performing a first distillation of a first part of the first mixture to generate a second mixture; and (c) performing a second reactive distillation of a first part of the second mixture and a second alcohol to generate a second ester; wherein the respective one of the first and second alcohols is a limiting reagent. The transesterification process provided in the present invention could highly reduce the investing production cost of the transesterification of the by-product, methyl acetate, in the conventional polyvinyl alcohol plants.

    摘要翻译: 提供乙酸甲酯的酯交换过程。 该方法包括:(a)对乙酸甲酯溶液和第一醇进行第一反应蒸馏以产生第一酯和第一混合物; (b)对所述第一混合物的第一部分进行第一蒸馏以产生第二混合物; 和(c)对所述第二混合物的第一部分和第二醇进行第二反应蒸馏以产生第二酯; 其中所述第一和第二醇中的相应的一种是限制性试剂。 本发明提供的酯交换方法可以大大降低常规聚乙烯醇装置中副产物乙酸甲酯的酯交换反应的投资生产成本。

    Transesterification process of methyl acetate
    2.
    发明授权
    Transesterification process of methyl acetate 有权
    乙酸甲酯的酯交换过程

    公开(公告)号:US07399881B1

    公开(公告)日:2008-07-15

    申请号:US11715776

    申请日:2007-03-08

    IPC分类号: C07C67/02

    摘要: A transesterification process of methyl acetate is provided. The process comprises: (a) performing a first reactive distillation of a methyl acetate solution and a first alcohol to generate a first ester and a first mixture; (b) performing a first distillation of a first part of the first mixture to generate a second mixture; and (c) performing a second reactive distillation of a first part of the second mixture and a second alcohol to generate a second ester; wherein the respective one of the first and second alcohols is a limiting reagent. The transesterification process provided in the present invention could highly reduce the investing production cost of the transesterification of the by-product, methyl acetate, in the conventional polyvinyl alcohol plants.

    摘要翻译: 提供乙酸甲酯的酯交换过程。 该方法包括:(a)对乙酸甲酯溶液和第一醇进行第一反应蒸馏以产生第一酯和第一混合物; (b)对所述第一混合物的第一部分进行第一蒸馏以产生第二混合物; 和(c)对所述第二混合物的第一部分和第二醇进行第二反应蒸馏以产生第二酯; 其中所述第一和第二醇中的相应的一种是限制性试剂。 本发明提供的酯交换方法可以大大降低常规聚乙烯醇装置中副产物乙酸甲酯的酯交换反应的投资生产成本。

    Structure and Method for E-Beam In-Chip Overlay Mark
    4.
    发明申请
    Structure and Method for E-Beam In-Chip Overlay Mark 有权
    电子束片内叠加标记的结构与方法

    公开(公告)号:US20140256067A1

    公开(公告)日:2014-09-11

    申请号:US14286433

    申请日:2014-05-23

    IPC分类号: H01L21/66

    CPC分类号: H01L22/12 G03F7/70633

    摘要: The present disclosure provides an integrated circuit structure that includes a semiconductor substrate having a first region and a second region having an area less than about 10 micron×10 micron; a first material layer over the semiconductor substrate and patterned to have a first circuit feature in the first region and a first mark in the second region; and a second material layer over the first material layer and patterned to have a second circuit feature in the first region and a second mark in the second region. The first mark includes first mark features oriented in a first direction, and second mark features oriented in a second direction perpendicular to the first direction. The second mark includes third mark features oriented in the first direction, and fourth mark features oriented in the second direction.

    摘要翻译: 本公开提供了一种集成电路结构,其包括具有第一区域的半导体衬底和具有小于约10微米×10微米的面积的第二区域; 半导体衬底上的第一材料层,并被图案化以具有第一区域中的第一电路特征和第二区域中的第一标记; 以及在所述第一材料层之上的第二材料层,并被图案化以具有所述第一区域中的第二电路特征和所述第二区域中的第二标记。 第一标记包括沿第一方向定向的第一标记特征,以及在垂直于第一方向的第二方向上定向的第二标记特征。 第二标记包括沿第一方向定向的第三标记特征,第四标记特征指向第二方向。

    Structure and method for E-beam in-chip overlay mark
    5.
    发明授权
    Structure and method for E-beam in-chip overlay mark 有权
    电子束片内重叠标记的结构和方法

    公开(公告)号:US08736084B2

    公开(公告)日:2014-05-27

    申请号:US13314644

    申请日:2011-12-08

    IPC分类号: H01L23/544

    CPC分类号: H01L22/12 G03F7/70633

    摘要: The present disclosure provides an integrated circuit structure that includes a semiconductor substrate having a first region and a second region having an area less than about 10 micron×10 micron; a first material layer over the semiconductor substrate and patterned to have a first circuit feature in the first region and a first mark in the second region; and a second material layer over the first material layer and patterned to have a second circuit feature in the first region and a second mark in the second region. The first mark includes first mark features oriented in a first direction, and second mark features oriented in a second direction perpendicular to the first direction. The second mark includes third mark features oriented in the first direction, and fourth mark features oriented in the second direction.

    摘要翻译: 本公开提供了一种集成电路结构,其包括具有第一区域的半导体衬底和具有小于约10微米×10微米的面积的第二区域; 半导体衬底上的第一材料层,并被图案化以具有第一区域中的第一电路特征和第二区域中的第一标记; 以及在所述第一材料层之上的第二材料层,并被图案化以具有所述第一区域中的第二电路特征和所述第二区域中的第二标记。 第一标记包括沿第一方向定向的第一标记特征,以及在垂直于第一方向的第二方向上定向的第二标记特征。 第二标记包括沿第一方向定向的第三标记特征,第四标记特征指向第二方向。