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公开(公告)号:US20130214821A1
公开(公告)日:2013-08-22
申请号:US13401652
申请日:2012-02-21
申请人: Hsin-Liang Chen , Wen-Ching Tung
发明人: Hsin-Liang Chen , Wen-Ching Tung
CPC分类号: H01L27/0259 , H03K17/127 , H03K17/567
摘要: A high voltage semiconductor element and an operating method thereof are provided. The high voltage semiconductor element comprises a high voltage metal-oxide-semiconductor transistor (HVMOS) and a NPN type electro-static discharge bipolar transistor (ESD BJT). The HVMOS has a drain and a source. The NPN type ESD BJT has a first collector and a first emitter. The first collector is electronically connected to the drain, and the first emitter is electronically connected to the source.
摘要翻译: 提供高电压半导体元件及其操作方法。 高电压半导体元件包括高电压金属氧化物半导体晶体管(HVMOS)和NPN型静电放电双极晶体管(ESD BJT)。 HVMOS有一个漏极和源极。 NPN型ESD BJT具有第一集电极和第一发射极。 第一集电极电连接到漏极,第一发射极电连接到源极。
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公开(公告)号:US08848325B2
公开(公告)日:2014-09-30
申请号:US13401652
申请日:2012-02-21
申请人: Hsin-Liang Chen , Wen-Ching Tung
发明人: Hsin-Liang Chen , Wen-Ching Tung
IPC分类号: H03K17/06
CPC分类号: H01L27/0259 , H03K17/127 , H03K17/567
摘要: A high voltage semiconductor element and an operating method thereof are provided. The high voltage semiconductor element comprises a high voltage metal-oxide-semiconductor transistor (HVMOS) and a NPN type electro-static discharge bipolar transistor (ESD BJT). The HVMOS has a drain and a source. The NPN type ESD BJT has a first collector and a first emitter. The first collector is electronically connected to the drain, and the first emitter is electronically connected to the source.
摘要翻译: 提供高电压半导体元件及其操作方法。 高电压半导体元件包括高电压金属氧化物半导体晶体管(HVMOS)和NPN型静电放电双极型晶体管(ESD BJT)。 HVMOS有一个漏极和源极。 NPN型ESD BJT具有第一集电极和第一发射极。 第一集电极电连接到漏极,第一发射极电连接到源极。
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