Locating critical dimension(s) of a layout feature in an IC design by modeling simulated intensities
    1.
    发明授权
    Locating critical dimension(s) of a layout feature in an IC design by modeling simulated intensities 有权
    通过建模模拟强度来确定IC设计中布局特征的关键维度

    公开(公告)号:US07636904B2

    公开(公告)日:2009-12-22

    申请号:US11584356

    申请日:2006-10-20

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5081

    摘要: A computer is programmed to perform lithography simulation at a number of locations in a transverse direction relative to a length of a feature of an IC design, to obtain simulated intensities at the locations. The computer is further programmed to determine constants of a predetermined formula that models a trend of the simulated intensities as a function of distance (in the transverse direction), by curve-fitting. The computer is also programmed to compute a value (“CD predictor”) based on the just-determined constants, the formula and a known threshold intensity for a given position along the feature's length. The just-described process, of lithography-simulation, followed by curve-fitting, followed by CD predictor computation, is repeatedly performed to obtain a number of CD predictors at a corresponding number of positions along the feature's length. The CD predictors are used to identify a position of a critical dimension, for use in, for example, layout verification.

    摘要翻译: 计算机被编程为在相对于IC设计的特征的长度的横向方向上的多个位置处执行光刻模拟,以在位置处获得模拟的强度。 计算机还被编程为通过曲线拟合来确定模拟强度的趋势作为距离(在横向方向上)的函数的预定公式的常数。 计算机还被编程为基于刚刚确定的常数,公式和沿特征长度的给定位置的已知阈值强度来计算值(“CD预测器”)。 重复执行刚才描述的光刻仿真过程,随后进行曲线拟合,随后进行CD预测器计算,以在沿着特征长度的相应位置的数量处获得多个CD预测器。 CD预测器用于识别临界尺寸的位置,用于例如布局验证。

    Locating critical dimension(s) of a layout feature in an IC design by modeling simulated intensities
    2.
    发明申请
    Locating critical dimension(s) of a layout feature in an IC design by modeling simulated intensities 有权
    通过建模模拟强度来确定IC设计中布局特征的关键维度

    公开(公告)号:US20080109766A1

    公开(公告)日:2008-05-08

    申请号:US11584356

    申请日:2006-10-20

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5081

    摘要: A computer is programmed to perform lithography simulation at a number of locations in a transverse direction relative to a length of a feature of an IC design, to obtain simulated intensities at the locations. The computer is further programmed to determine constants of a predetermined formula that models a trend of the simulated intensities as a function of distance (in the transverse direction), by curve-fitting. The computer is also programmed to compute a value (“CD predictor”) based on the just-determined constants, the formula and a known threshold intensity for a given position along the feature's length. The just-described process, of lithography-simulation, followed by curve-fitting, followed by CD predictor computation, is repeatedly performed to obtain a number of CD predictors at a corresponding number of positions along the feature's length. The CD predictors are used to identify a position of a critical dimension, for use in, for example, layout verification.

    摘要翻译: 计算机被编程为在相对于IC设计的特征的长度的横向方向上的多个位置处执行光刻模拟,以在位置处获得模拟的强度。 计算机还被编程为通过曲线拟合来确定模拟强度的趋势作为距离(在横向方向上)的函数的预定公式的常数。 计算机还被编程为基于刚刚确定的常数,公式和沿特征长度的给定位置的已知阈值强度来计算值(“CD预测器”)。 重复执行刚才描述的光刻仿真过程,随后进行曲线拟合,随后进行CD预测器计算,以在沿着特征长度的相应位置的数量处获得多个CD预测器。 CD预测器用于识别临界尺寸的位置,用于例如布局验证。