公开(公告)号：US20220406679A1

公开(公告)日：2022-12-22

申请号：US17888625

申请日：2022-08-16

Applicant: Huawei Digital Power Technologies Co., Ltd.

Inventor： Ruoyang Du ,  Zhen Lv ,  Chaoyang Guo ,  Wei Wu ,  Bingzhi Wu

IPC: H01L23/373 ,  H01L25/065 ,  H01L25/18 ,  H01L25/00 ,  H01L21/48 ,  H01L23/00

Abstract: A method for producing a power semiconductor system includes packaging a power device in plastic to form a power semiconductor component, forming a first heat dissipation face on a surface of the power semiconductor component; heating a first material between a first heat sink and the first heat dissipation face; and cooling the first material on the first heat dissipation face to connect the power semiconductor component and the first heat sink.