公开(公告)号：US20240421235A1

公开(公告)日：2024-12-19

申请号：US18813582

申请日：2024-08-23

Applicant: Huawei Digital Power Technologies Co., Ltd.

Inventor： Yi YU ,  Chia Fu LIU ,  Yuru WANG ,  Bo GAO ,  Longgu TANG ,  Xin WANG ,  Dongguang ZHAO ,  Shijin LUO

IPC: H01L29/872 ,  H01L21/02 ,  H01L23/29 ,  H01L23/31 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66

Abstract: A semiconductor device and a semiconductor device manufacturing method. The semiconductor device includes: a substrate; an epitaxial layer, located on one side of the substrate, where a doped region is formed on a surface that is of the epitaxial layer and that is away from the substrate, and the epitaxial layer includes an active region and a termination region that surrounds the active region; a passivation layer, covering the termination region and on which a window corresponding to the active region is formed; and a metal layer, covering the window and an inner edge that is of the passivation layer and that forms the window, and forming a schottky contact with the active region in the window.