公开(公告)号：US20240421235A1

公开(公告)日：2024-12-19

申请号：US18813582

申请日：2024-08-23

Applicant: Huawei Digital Power Technologies Co., Ltd.

Inventor： Yi YU ,  Chia Fu LIU ,  Yuru WANG ,  Bo GAO ,  Longgu TANG ,  Xin WANG ,  Dongguang ZHAO ,  Shijin LUO

IPC: H01L29/872 ,  H01L21/02 ,  H01L23/29 ,  H01L23/31 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66

Abstract: A semiconductor device and a semiconductor device manufacturing method. The semiconductor device includes: a substrate; an epitaxial layer, located on one side of the substrate, where a doped region is formed on a surface that is of the epitaxial layer and that is away from the substrate, and the epitaxial layer includes an active region and a termination region that surrounds the active region; a passivation layer, covering the termination region and on which a window corresponding to the active region is formed; and a metal layer, covering the window and an inner edge that is of the passivation layer and that forms the window, and forming a schottky contact with the active region in the window.

公开(公告)号：US20230299155A1

公开(公告)日：2023-09-21

申请号：US18185969

申请日：2023-03-17

Applicant: Huawei Digital Power Technologies Co., Ltd.

Inventor： Longgu Tang ,  Fei Hu ,  Bo Gao ,  Chia Fu LIU ,  Boning Huang ,  Zhihua Liu

IPC: H01L29/40

CPC classification number: H01L29/402 ,  H01L29/404 ,  H01L29/0619

Abstract: A chip and an electronic device are disclosed. The chip includes a main functional area, a protection area, and a transition area located between the main functional area and the protection area. The chip includes a field oxide, a metal layer, and a passivation layer that are sequentially stacked on a semiconductor substrate. In the transition area, the field oxide includes a primary field oxide and at least one secondary field oxide that are disposed at intervals, the secondary field oxide is located on a side of the primary field oxide facing the main functional area, the metal layer extends from the main functional area to a side of the primary field oxide facing away from the semiconductor substrate. The passivation layer extends from a side of the metal layer facing away from the semiconductor substrate to a side of the metal layer facing away from the main functional area.