公开(公告)号：US20240297214A1

公开(公告)日：2024-09-05

申请号：US18648115

申请日：2024-04-26

Applicant: Huawei Digital Power Technologies Co., Ltd.

Inventor： Fei Hu ,  Longgu Tang ,  Yunbin Gao ,  Bo Gao

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/417 ,  H01L29/78

CPC classification number: H01L29/0634 ,  H01L29/1608 ,  H01L29/41741 ,  H01L29/7813

Abstract: A semiconductor device includes an N-type semiconductor substrate, a drift layer, a semiconductor layer, a first trench located in the semiconductor layer, a gate located in the first trench, a P-well, a source region, and an N-type second semiconductor region that are located in the semiconductor layer, a source, and a drain. The drift layer includes an N-type column region and a P-type column region that are disposed in parallel and alternately. In the semiconductor device, an electrode is further disposed below the gate, a P-type first semiconductor region is disposed at the bottom of the first trench, the first semiconductor region is in contact with the electrode and the P-type column region located below the gate, and the electrode is electrically connected to the source.