-
公开(公告)号:US20220189901A1
公开(公告)日:2022-06-16
申请号:US17687220
申请日:2022-03-04
Applicant: Huawei Technologies Co., Ltd.
Inventor: Shiqun Gu , Rui Niu , Xiaodong Zhang , Yiwei Ren , Tonglong Zhang
IPC: H01L23/00 , H01L23/538 , H01L25/10 , H01L25/065 , H01L25/00
Abstract: A packaged IC includes a fanout layer, a processor having a first surface residing substantially adjacent a first surface of the fanout layer, a Redistribution Layer (RDL) having a first surface coupled to a second surface of the processor, and a memory coupled to a second surface of the RDL, wherein a first portion of the memory is disposed outside of a footprint of the processor and a second portion of the memory is disposed within the footprint of the processor. The packaged IC further includes first conductive posts disposed beneath the first portion of the memory proximate a first side of the processor for providing communication links between the processor and memory, and second conductive posts coupled between the fanout layer and conductive features of the RDL coupled to power inputs of the second portion of the memory, the second conductive posts proximate a second side of the processor.
-
公开(公告)号:US20210358894A1
公开(公告)日:2021-11-18
申请号:US17388455
申请日:2021-07-29
Applicant: Huawei Technologies Co., Ltd.
Inventor: Shiqun Gu , Rui Niu , Tianqiang Huang
IPC: H01L25/10 , H01L23/498 , H01L23/48 , H01L23/31 , H01L25/00 , H01L23/00 , H01L23/538
Abstract: A packaged IC includes a fanout layer, an Application Processor (AP) die having a first surface residing substantially adjacent a first surface of the fanout layer, a Redistribution Layer (RDL) having a first surface coupled to a second surface of the AP die Process, and high bandwidth memory coupled to a second surface of the RDL and configured to communicate wirelessly with the AP die. The packaged IC further includes an encapsulant surrounding a substantial portion of the high bandwidth memory, the RDL, and the AP die, the encapsulant contacting the fanout layer on a first side and having an exposed second side, a plurality of conductive posts extending from the fanout layer to the RDL through a portion of the encapsulant, and a plurality of Through Mold Vias (TMVs) extending between the fanout layer and the exposed second side of the encapsulant.
-
公开(公告)号:US12154890B2
公开(公告)日:2024-11-26
申请号:US17388455
申请日:2021-07-29
Applicant: Huawei Technologies Co., Ltd.
Inventor: Shiqun Gu , Rui Niu , Tianqiang Huang
IPC: H01L25/10 , H01L23/00 , H01L23/31 , H01L23/48 , H01L23/498 , H01L23/538 , H01L25/00
Abstract: A packaged IC includes a fanout layer, an Application Processor (AP) die having a first surface residing substantially adjacent a first surface of the fanout layer, a Redistribution Layer (RDL) having a first surface coupled to a second surface of the AP die Process, and high bandwidth memory coupled to a second surface of the RDL and configured to communicate wirelessly with the AP die. The packaged IC further includes an encapsulant surrounding a substantial portion of the high bandwidth memory, the RDL, and the AP die, the encapsulant contacting the fanout layer on a first side and having an exposed second side, a plurality of conductive posts extending from the fanout layer to the RDL through a portion of the encapsulant, and a plurality of Through Mold Vias (TMVs) extending between the fanout layer and the exposed second side of the encapsulant.
-
-