公开(公告)号：US20240331739A1

公开(公告)日：2024-10-03

申请号：US18741084

申请日：2024-06-12

Applicant: Huawei Technologies Co., Ltd.

Inventor： Jincan Guo ,  Tianqiang Huang ,  Rongbin Liu ,  Jieqiang Chen ,  Yun Liu ,  Zhengbo Wang

IPC: G11C5/06 ,  G11C7/10

CPC classification number: G11C5/063 ,  G11C7/1048

Abstract: This disclosure discloses a memory, a memory use method, a memory manufacturing method, and an electronic device. The memory includes a control layer and at least one storage layer stacked on the control layer. The storage layer includes a plurality of storage channels, and each storage channel includes an independent data interface bus. The control layer includes a plurality of controllers and a plurality of user interfaces, the controller is configured to access data stored in a storage channel connected to the controller. The plurality of controllers are connected to the data interface buses of the plurality of storage channels in one-to-one correspondence. A quantity of user interfaces is the same as a quantity of user storage channels that can be invoked by a user. The quantity of user interfaces is less than a quantity of controllers.

公开(公告)号：US20210358894A1

公开(公告)日：2021-11-18

申请号：US17388455

申请日：2021-07-29

Applicant: Huawei Technologies Co., Ltd.

Inventor： Shiqun Gu ,  Rui Niu ,  Tianqiang Huang

IPC: H01L25/10 ,  H01L23/498 ,  H01L23/48 ,  H01L23/31 ,  H01L25/00 ,  H01L23/00 ,  H01L23/538

Abstract: A packaged IC includes a fanout layer, an Application Processor (AP) die having a first surface residing substantially adjacent a first surface of the fanout layer, a Redistribution Layer (RDL) having a first surface coupled to a second surface of the AP die Process, and high bandwidth memory coupled to a second surface of the RDL and configured to communicate wirelessly with the AP die. The packaged IC further includes an encapsulant surrounding a substantial portion of the high bandwidth memory, the RDL, and the AP die, the encapsulant contacting the fanout layer on a first side and having an exposed second side, a plurality of conductive posts extending from the fanout layer to the RDL through a portion of the encapsulant, and a plurality of Through Mold Vias (TMVs) extending between the fanout layer and the exposed second side of the encapsulant.

公开(公告)号：US12154890B2

公开(公告)日：2024-11-26

申请号：US17388455

申请日：2021-07-29

Applicant: Huawei Technologies Co., Ltd.

Inventor： Shiqun Gu ,  Rui Niu ,  Tianqiang Huang

IPC: H01L25/10 ,  H01L23/00 ,  H01L23/31 ,  H01L23/48 ,  H01L23/498 ,  H01L23/538 ,  H01L25/00

Abstract: A packaged IC includes a fanout layer, an Application Processor (AP) die having a first surface residing substantially adjacent a first surface of the fanout layer, a Redistribution Layer (RDL) having a first surface coupled to a second surface of the AP die Process, and high bandwidth memory coupled to a second surface of the RDL and configured to communicate wirelessly with the AP die. The packaged IC further includes an encapsulant surrounding a substantial portion of the high bandwidth memory, the RDL, and the AP die, the encapsulant contacting the fanout layer on a first side and having an exposed second side, a plurality of conductive posts extending from the fanout layer to the RDL through a portion of the encapsulant, and a plurality of Through Mold Vias (TMVs) extending between the fanout layer and the exposed second side of the encapsulant.