Integrated Circuit
    2.
    发明申请

    公开(公告)号:US20230049723A1

    公开(公告)日:2023-02-16

    申请号:US17976207

    申请日:2022-10-28

    Inventor: Xi Qin Xun Gu Yu Tian

    Abstract: This application provides an integrated circuit, including a first MOS transistor. A first effective gate and a second effective gate are disposed in the first MOS transistor, and a first redundant gate is disposed between the first effective gate and the second effective gate. The first effective gate, the second effective gate, and the first redundant gate cover a plurality of fins arranged in parallel. The first effective gate and the second effective gate are connected to a gate terminal of the first MOS transistor. Fins on both sides of the first effective gate and fins on both sides of the second effective gate are respectively connected to a source terminal and a drain terminal of the first MOS transistor. The first redundant gate is connected to a redundant potential or suspended.

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