公开(公告)号：US20160181460A1

公开(公告)日：2016-06-23

申请号：US15056385

申请日：2016-02-29

Applicant: Huawei Technologies Co., Ltd.

Inventor： Xu Pan

IPC: H01L31/107 ,  H01L31/0352 ,  H01L31/0312

CPC classification number: H01L31/1075 ,  H01L31/0312 ,  H01L31/035272 ,  H01L31/107

Abstract: An avalanche photodiode includes a P-type contact layer, a light absorption layer, a compositionally-graded symmetrical multiplication layer, and an N-type contact layer. The P-type contact layer is connected to the light absorption layer, the light absorption layer is connected to the compositionally-graded symmetrical multiplication layer, and the compositionally-graded symmetrical multiplication layer is connected to the N-type contact layer. The compositionally-graded symmetrical multiplication layer is configured to amplify the electrical signal, and the compositionally-graded symmetrical multiplication layer has a centrosymmetric structure and includes multiple graded layers and the multiple graded layers are used to suppress ionization of a carrier in order to reduce an excess noise factor, and the symmetrical structure of the compositionally-graded symmetrical multiplication layer effectively relaxes a large stress of a lattice mismatched system, thereby obtaining a high-quality epitaxy film, and reducing noise.

Abstract translation: 雪崩光电二极管包括P型接触层，光吸收层，组成梯度对称倍增层和N型接触层。 P型接触层连接到光吸收层，光吸收层连接到组成梯度对称倍增层，组成梯度对称倍增层连接到N型接触层。 组成梯度的对称倍增层被配置为放大电信号，并且组成梯度的对称倍增层具有中心对称结构并且包括多个梯度层，并且多个梯度层用于抑制载流子的电离以便减少 过多的噪声因子，组成梯度对称倍增层的对称结构有效地缓解了晶格失配系统的大应力，从而获得了高质量的外延膜，并降低了噪声。

公开(公告)号：US09831946B2

公开(公告)日：2017-11-28

申请号：US15198676

申请日：2016-06-30

Applicant: Huawei Technologies Co., Ltd.

Inventor： Xiaoping Zhou ,  Jing Hu ,  Yue Wen ,  Lei Wang ,  Xu Pan ,  Chengzhi Xu

IPC: H04B10/08 ,  H04B10/077 ,  H04J14/02 ,  H04Q11/00

CPC classification number: H04B10/0773 ,  H04J14/0204 ,  H04J14/0212 ,  H04J14/0223 ,  H04J14/0227 ,  H04J14/0282 ,  H04J14/0295 ,  H04J14/0297 ,  H04Q11/0067 ,  H04Q2011/0016 ,  H04Q2011/0081

Abstract: The present invention discloses: when a first laser in N lasers is switched to a second idle laser in M lasers, a wavelength of a wavelength-selective optical element to which the first laser is coupled is adjusted from a first wavelength to a second wavelength, and the second wavelength is different from the N wavelengths. Similarly, when a first optical receiver in N optical receivers is switched to a second idle optical receiver in M optical receivers, a wavelength of a wavelength-selective optical element to which the first optical receiver is coupled is adjusted from a first wavelength to a second wavelength, and the second wavelength is different from the N wavelengths.

公开(公告)号：US20160315698A1

公开(公告)日：2016-10-27

申请号：US15198676

申请日：2016-06-30

Applicant: Huawei Technologies Co., Ltd.

Inventor： Xiaoping Zhou ,  Jing Hu ,  Yue Wen ,  Lei Wang ,  Xu Pan ,  Chengzhi Xu

IPC: H04B10/077 ,  H04Q11/00 ,  H04J14/02

CPC classification number: H04B10/0773 ,  H04J14/0204 ,  H04J14/0212 ,  H04J14/0223 ,  H04J14/0227 ,  H04J14/0282 ,  H04J14/0295 ,  H04J14/0297 ,  H04Q11/0067 ,  H04Q2011/0016 ,  H04Q2011/0081

Abstract: The present invention discloses: when a first laser in N lasers is switched to a second idle laser in M lasers, a wavelength of a wavelength-selective optical element to which the first laser is coupled is adjusted from a first wavelength to a second wavelength, and the second wavelength is different from the N wavelengths. Similarly, when a first optical receiver in N optical receivers is switched to a second idle optical receiver in M optical receivers, a wavelength of a wavelength-selective optical element to which the first optical receiver is coupled is adjusted from a first wavelength to a second wavelength, and the second wavelength is different from the N wavelengths.

Abstract translation: 本发明公开了：当N激光器中的第一激光器被切换到M激光器中的第二怠速激光器时，将第一激光器耦合的波长选择性光学元件的波长从第一波长调节到第二波长， 第二波长与N个波长不同。 类似地，当在N个光接收器中的第一光接收器被切换到M个光接收器中的第二空闲光接收器时，将第一光接收器耦合的波长选择光学元件的波长从第一波长调节到第二波长 波长，第二波长不同于N个波长。