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    SOLAR CELL AND PHOTOVOLTAIC MODULE
    3.
    发明公开
    SOLAR CELL AND PHOTOVOLTAIC MODULE 审中-公开

    公开(公告)号：US20240204121A1

    公开(公告)日：2024-06-20

    申请号：US18457333

    申请日：2023-08-28

    Applicant: ZHEJIANG JINKO SOLAR CO., LTD.

    Inventor： Changming LIU ,  Jingsheng JIN ,  Bike ZHANG ,  Xinyu ZHANG

    IPC: H01L31/0352 ,  H01L31/0224 ,  H01L31/075

    CPC classification number: H01L31/035272 ,  H01L31/022425 ,  H01L31/075

    Abstract: Provided are a solar cell and a photovoltaic module. The solar cell includes a body and a first electrode. The body has a first region and a second region, and at least part of the first region covers the first electrode. The body includes a substrate, a first tunneling layer, a first doped conductive layer, and a second doped conductive layer. The first tunneling layer has a greater thickness in the first region than in the second region. The first tunneling layer is arranged between the first doped conductive layer and the second doped conductive layer. The first electrode is electrically connected to the first doped conductive layer. The second doped conductive layer is located on a side of the substrate close to the first tunneling layer. The second doped conductive layer has a less thickness in the first region than in the second region.

    Photodetector
    5.
    发明授权
    Photodetector 有权

    公开(公告)号：US11973159B2

    公开(公告)日：2024-04-30

    申请号：US17633717

    申请日：2019-08-28

    Applicant: Nippon Telegraph and Telephone Corporation

    Inventor： Kotaro Takeda ,  Kiyofumi Kikuchi ,  Yoshiho Maeda ,  Tatsuro Hiraki

    IPC: H01L31/107 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/0352

    CPC classification number: H01L31/1075 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/035272

    Abstract: Provided is a photodetector which can be manufactured in a standard process of a mass-produced CMOS foundry. The photodetector includes a silicon (Si) substrate; a lower clad layer; a core layer including a waveguide layer configured to guide signal light, and including a first Si slab doped with first conductive impurity ions and a second Si slab doped with second conductive impurity ions; a germanium (Ge) layer configured to absorb light and including a Ge region doped with the first conductive impurity ions; an upper clad layer; and electrodes respectively connected to the first and second Si slabs and the Ge region. A region of the core layer sandwiched between the first Si slab and the second Si slab operates as an amplification layer.

    PHOTOVOLTAIC CELL AND PHOTOVOLTAIC MODULE
    8.
    发明公开
    PHOTOVOLTAIC CELL AND PHOTOVOLTAIC MODULE 审中-公开

    公开(公告)号：US20230395740A1

    公开(公告)日：2023-12-07

    申请号：US17859975

    申请日：2022-07-07

    Applicant: JINKO SOLAR (HAINING) CO., LTD.

    Inventor： Jie MAO ,  Menglei XU ,  Peiting ZHENG ,  Jie YANG ,  Xinyu ZHANG

    IPC: H01L31/06 ,  H01L31/05 ,  H01L31/0352

    CPC classification number: H01L31/06 ,  H01L31/0504 ,  H01L31/035272

    Abstract: A photovoltaic cell is provided, including: a substrate; a tunneling layer, a field passivation layer and a first passivation film that are sequentially disposed on a rear surface of the substrate; and a first electrode. The first electrode penetrates the first passivation film and is in contact with the field passivation layer. A doping concentration of the first doping element in the tunneling layer is less than a doping concentration of the first doping element in the field passivation layer, and the doping concentration of the first doping element in the tunneling layer is greater than a doping concentration of the first doping element in the substrate. The field passivation layer includes a first doped region and a second doped region, and a doping curve slope of the first doped region is greater than a doping curve slope of the second doped region.

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